Datasheet STW60N10, STH60N10FI Datasheet (SGS Thomson Microelectronics)

STH60N10/FI

STW60N10

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

■ TYPICAL R

DS(on)

= 0.02 Ω

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

o

C

■ LOW GATE CHARGE

■ VERY HIGH CURRENT CAPABILITY

■ 175

o

C OPERATING TEMPERATURE

■ APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

1

2

3

May 1993

TYPE V

DSS

R

DS(on)

I

D

STH 60N1 0
STH 60N1 0FI
STW60N10

100 V
100 V
100 V

< 0.025 Ω
< 0.025 Ω
< 0.025 Ω

60 A
36 A
60 A

TO-218 ISOWATT218

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Unit

STH/STW 60N10 STH6 0N10FI

V

DS

Drain - source Voltage (VGS=0) 100 V

V

DGR

Drain- gate Voltage (RGS=20kΩ)100V

V

GS

Gate-source Voltage ± 20 V

I

D

Drain Current (continuous) at Tc=25oC6036A

I

D

Drain Current (continuous) at Tc=100oC42 22A

I

DM

(•) Drain Current (pulsed) 240 240 A

P

tot

Total Di ssipation at Tc=25oC 200 70 W
Derat ing Factor 1.33 0.56 W/

o

C

V

ISO

Ins ulation Withs t and Voltage (DC)  4000 V

T

stg

St orage Te mperat ur e -65 to 175 -65 to 150

o

C

T

j

Max. Operating Jun c t ion T emperat ure 175 1 50

o

C

(•) Pulsewidth limited by safe operating area

1

2

3

1

2

3

TO-247

1/11

THERMAL DATA

TO - 218/ TO-247 IS O WAT T 218

R

thj-case

Thermal Resistance Junction -c as e Max 0.75 1.79

o

C/W

R

thj-amb

R

thc-sink

T

l

Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purp ose

30

0.1

300

o

C/W

o

C/W

o

C

AVALANCHE CHARACTERISTICS

Symbol Parameter M ax Valu e Uni t

I

AR

Avalanc h e Cu rr ent , Repet itive or Not-Repetitive
(pulse width limited by Tjmax, δ <1%)

60 A

E

AS

Single Pul se Avalanche Ener gy
(starti ng T

j

=25oC, ID=IAR,VDD=25V)

720 mJ

E

AR

Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)

180 mJ

I

AR

Avalanc h e Cu rr ent , Repet itive or Not-Repetitive
(Tc= 100oC, pulse width limit ed by Tjmax, δ <1%)

37 A

ELECTRICAL CHARACTERISTICS (T

case

=25oC unless otherwise specified)

OFF

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - source
Break d own Voltage

ID=250µAVGS= 0 100 V

I

DSS

Zer o Gate Voltage
Drain Current (VGS=0)

VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC

250

1000µAµA

I

GSS

Gat e- body Leak age
Current (V

DS

=0)

V

GS

= ± 20 V ± 100 nA

ON (∗)

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage VDS=VGSID=250µA22.94V

R

DS(on)

St at ic Drain-s ourc e O n
Resistance

VGS=10V ID=30A
VGS=10V ID=30A Tc= 100oC

0.02 0.025

0.05

Ω
Ω

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

VGS=10V

60 A

DYNAMIC

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

g

fs

(∗)Forward

Tr ansconduct anc e

VDS>I

D(on)xRDS(on)maxID

=30A 25 35 S

C

iss

C

oss

C

rss

Input Capacitance
Out put Capacitance
Reverse Transfer
Capaci tance

VDS=25V f=1MHz VGS= 0 4000

1100

250

5000
1400

350

pF
pF
pF

STH60N10/FI STW60N10

2/11

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on T im e
Rise Time

VDD=80V ID=30A
RG=50 Ω VGS=10V
(see test circuit, figure 3)

90

270

130
380

ns
ns

(di/dt)

on

Turn-on Curre nt S lope VDD=80V ID=60A

RG=50 Ω VGS=10V
(see test circuit, figure 5)

270 A/µs

Q

g

Q

gs

Q

gd

Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge

VDD=80V ID=30A VGS=10V 120

16
60

170 nC

nC
nC

SWITCHING OFF

Symbol Parameter Test Co ndition s Mi n. Typ. M ax. Unit

t

r(Voff)

t

f

t

c

Off -voltage Rise Time
Fall Time
Cross-over Time

VDD=80V ID=60A
RG=50 Ω VGS=10V
(see test circuit, figure 5)

200
210
410

280
290
570

ns
ns
ns

SOURCE DRAIN DIODE

Symbol Parameter Test Co ndition s Mi n. Typ. M ax. Unit

I

SD

I

SDM

(•)

Source-drain Current
Source-drain Current
(pulsed)

60

240

A
A

V

SD

(∗) Forward On Volt age ISD=60A VGS=0 1.6 V

t

rr

Q

rr

I

RRM

Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current

ISD= 60 A di/dt = 100 A/µs
VDD=30V Tj=150oC
(see test circuit, figure 5)

180

1

11

ns

µC

A

(∗) Pulsed: Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218

STH60N10/FI STW60N10

3/11

Thermal ImpedeanceFor TO-218 and TO-247

Derating Curve For TO-218 and TO-247

Output Characteristics

Thermal Impedance For ISOWATT218

Derating Curve For ISOWATT218

Transfer Characteristics

STH60N10/FI STW60N10

4/11

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-sourceVoltage Capacitance Variations

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

Temperature

STH60N10/FI STW60N10

5/11

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode ForwardCharacteristics

STH60N10/FI STW60N10

6/11

Fig. 2: Unclamped Inductive Waveforms

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

Fig. 1: Unclamped Inductive Load Test Circuits

STH60N10/FI STW60N10

7/11

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.208
A1 2.87 0.113
A2 1.5 2.5 0.059 0.098

b 1 1.4 0.039 0.055
b1 2.25 0.088
b2 3.05 3.43 0.120 0.135

C 0.4 0.8 0.015 0.031
D 20.4 21.18 0.803 0.833

e 5.43 5.47 0.213 0.215

E 15.3 15.95 0.602 0.628

L 15.57 0.613
L1 3.7 4.3 0.145 0.169

Q 5.3 5.84 0.208 0.230

ØP 3.5 3.71 0.137 0.146

D

Q

ø

A

A2

A1

C

E

e

b1

b

b2

L

L1

TO-247 MECHANICAL DATA

STH60N10/FI STW60N10

8/11

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098

E 0.5 0.78 0.019 0.030

F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598

L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220

R – 12.2 – 0.480

Ø 4 4.1 0.157 0.161

R

A

C

D

E

H

F

G

L6

Ø

L3

L2

L5

123

TO-218 (SOT-93) MECHANICAL DATA

P025A

STH60N10/FI STW60N10

9/11

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122

D1 1.88 2.08 0.074 0.081

E 0.45 1 0.017 0.039

F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637

L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817

M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181

L1

A

C

D

E

H

G

M

F

L6

123

U

L5

L4

D1

N

L3

L2

ISOWATT218 MECHANICAL DATA

P025C

STH60N10/FI STW60N10

10/11

Information furnished isbelieved to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequences of use of suchinformation nor for any infringementof patents orother rights of third parties whichmay results from its use. No
license isgrantedby implicationor otherwiseunderany patentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes and replacesall information previouslysupplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedforuse ascriticalcomponentsin lifesupportdevices orsystemswithoutexpress
written approvalof SGS-THOMSON Microelectonics.

 1994 SGS-THOMSONMicroelectronics - All Rights Reserved

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STH60N10/FI STW60N10

11/11