SGS Thomson Microelectronics STW60N10, STH60N10FI Datasheet
STH60N10/FI
STW60N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
■ TYPICAL R
DS(on)
= 0.02 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
o
C
■ LOW GATE CHARGE
■ VERY HIGH CURRENT CAPABILITY
■ 175
o
C OPERATING TEMPERATURE
■ APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
1
2
3
May 1993
TYPE V
DSS
R
DS(on)
I
D
STH 60N1 0
STH 60N1 0FI
STW60N10
100 V
100 V
100 V
< 0.025 Ω
< 0.025 Ω
< 0.025 Ω
60 A
36 A
60 A
TO-218 ISOWATT218
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Unit
STH/STW 60N10 STH6 0N10FI
V
DS
Drain - source Voltage (VGS=0) 100 V
V
DGR
Drain- gate Voltage (RGS=20kΩ)100V
V
GS
Gate-source Voltage ± 20 V
I
D
Drain Current (continuous) at Tc=25oC6036A
I
D
Drain Current (continuous) at Tc=100oC42 22A
I
DM
(•) Drain Current (pulsed) 240 240 A
P
tot
Total Di ssipation at Tc=25oC 200 70 W
Derat ing Factor 1.33 0.56 W/
o
C
V
ISO
Ins ulation Withs t and Voltage (DC) 4000 V
T
stg
St orage Te mperat ur e -65 to 175 -65 to 150
o
C
T
j
Max. Operating Jun c t ion T emperat ure 175 1 50
o
C
(•) Pulsewidth limited by safe operating area
1
2
3
1
2
3
TO-247
1/11
THERMAL DATA
TO - 218/ TO-247 IS O WAT T 218
R
thj-case
Thermal Resistance Junction -c as e Max 0.75 1.79
o
C/W
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purp ose
30
0.1
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter M ax Valu e Uni t
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-Repetitive
(pulse width limited by Tjmax, δ <1%)
60 A
E
AS
Single Pul se Avalanche Ener gy
(starti ng T
j
=25oC, ID=IAR,VDD=25V)
720 mJ
E
AR
Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)
180 mJ
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-Repetitive
(Tc= 100oC, pulse width limit ed by Tjmax, δ <1%)
37 A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwise specified)
OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - source
Break d own Voltage
ID=250µAVGS= 0 100 V
I
DSS
Zer o Gate Voltage
Drain Current (VGS=0)
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
250
1000µAµA
I
GSS
Gat e- body Leak age
Current (V
DS
=0)
V
GS
= ± 20 V ± 100 nA
ON (∗)
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID=250µA22.94V
R
DS(on)
St at ic Drain-s ourc e O n
Resistance
VGS=10V ID=30A
VGS=10V ID=30A Tc= 100oC
0.02 0.025
0.05
Ω
Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
60 A
DYNAMIC
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansconduct anc e
VDS>I
D(on)xRDS(on)maxID
=30A 25 35 S
C
iss
C
oss
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capaci tance
VDS=25V f=1MHz VGS= 0 4000
1100
250
5000
1400
350
pF
pF
pF
STH60N10/FI STW60N10
2/11
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on T im e
Rise Time
VDD=80V ID=30A
RG=50 Ω VGS=10V
(see test circuit, figure 3)
90
270
130
380
ns
ns
(di/dt)
on
Turn-on Curre nt S lope VDD=80V ID=60A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
270 A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge
VDD=80V ID=30A VGS=10V 120
16
60
170 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Co ndition s Mi n. Typ. M ax. Unit
t
r(Voff)
t
f
t
c
Off -voltage Rise Time
Fall Time
Cross-over Time
VDD=80V ID=60A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
200
210
410
280
290
570
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Co ndition s Mi n. Typ. M ax. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
60
240
A
A
V
SD
(∗) Forward On Volt age ISD=60A VGS=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD= 60 A di/dt = 100 A/µs
VDD=30V Tj=150oC
(see test circuit, figure 5)
180
1
11
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218
STH60N10/FI STW60N10
3/11
Thermal ImpedeanceFor TO-218 and TO-247
Derating Curve For TO-218 and TO-247
Output Characteristics
Thermal Impedance For ISOWATT218
Derating Curve For ISOWATT218
Transfer Characteristics
STH60N10/FI STW60N10
4/11
Loading...