SGS Thomson Microelectronics STW5NB90 Datasheet

STW5NB90
N - CHANNEL 900V - 2.3- 5.6A - TO-247
PowerMESH MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST W 5N B 90 90 0 V < 2.5 5.6 A
TYPICALR
EXTREMELYHIGH dv/dtCAPABILITY
100%AVALANCHETESTED
GATECHARGE MINIMIZED
DS(on)
= 2.3
DESCRIPTION
Using the latesthigh voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS
SWITCHMODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIESAND MOTORDRIVE
HIGHCURRENT, HIGH SPEED SWITCHING
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
() Pulsewidth limited by safe operating area (1)ISD≤ 5A, di/dt ≤ 200A/µs, VDD≤ V
March 1999
Drain-source Voltage (VGS=0) 900 V
DS
Dra in- gate Voltage (RGS=20kΩ)
DGR
Gate -sourc e Vo ltage ± 30 V
GS
I
Drain Current (co ntinuous) at Tc=25oC5.6A
D
I
Drain Current (co ntinuous) at Tc=100oC3.3A
D
900 V
() Drain Current (pulsed) 22.4 A
Total Dissipation a t Tc=25oC160W
tot
Derating Factor 1.28 W/
1) Peak Diode Rec ov e ry volt age slop e 4 V/ns
St orage T emper ature -65 t o 1 50
stg
T
Max. Op er a t ing J unction Tem pe r at u re 150
j
,TjT
(BR)DSS
JMAX
o
C
o
C
o
C
1/8
STW5NB90
THERMAL DATA
R
thj-case
Rthj-a mb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max Val ue Uni t
I
AR
E
Ther mal Resis t an ce Junc ti on-cas e Max Ther mal Resis t an ce Junc ti on-ambien t Max Thermal Resistance Case-sink Typ Maximum Lead Temperat u r e Fo r Soldering Purp os e
l
Avalanche Cu rrent, Repetitive or No t -Repet it ive (pulse width limited by T
Single Pulse Avalanche Energ y
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
0.78 30
0.1
300
5.6 A
284 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
900 V
Break d own V o lt age
I
DSS
I
GSS
Zero Gate Voltage Drain Current (V
GS
Gat e- b ody Le akage Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125oC
V
DS
= ± 30 V
V
GS
1
50
± 100 nA
ON()
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250 µA
345V
Voltage
R
DS(on)
Static Drain-source On
VGS=10V ID=2.5 A 2.3 2.5
Resistanc e
I
D(on)
On S t ate Drain Current VDS>I
D(on)xRDS(on)max
5.6 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconduc tance
C
C
C
Input Cap ac i t ance
iss
Out put Capacita nce
oss
Reverse Transf er
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=2.5A 2.5 4.1 S
VDS=25V f=1MHz VGS= 0 1250
128
13
µA µ
pF pF pF
A
2/8
STW5NB90
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
d(on)
Turn-on Time
t
r
Rise Time
VDD= 450 V ID=2.5A
=4.7 VGS=10V
R
G
18
9
(see test circu it, figure 3)
Q Q Q
Total Gate Charge
g
Gat e- Source Cha rge
gs
Gate-Drain Charge
gd
VDD= 720 V ID=5 A VGS=10V
=4.7 VGS=10V
R
G
33 10 13
47 nC
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off -voltage Rise Ti me Fall Time
f
Cross-ov er Time
c
VDD= 720 V ID=5A
=4.7 Ω VGS=10V
R
G
(see test circu it, figure 5)
13 10 17
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, dutycycle 1.5% () Pulse width limited by safeoperating area
Source-drain Curr ent
(•)
Source-drain Curr ent
5.6
22.4
(pulsed)
(∗) F or ward On Volt age ISD=5A VGS=0 1.6 V
Reverse Reco very
rr
Time Reverse Reco very
rr
= 5 A di/d t = 100 A/µs
I
SD
= 100 V Tj=150oC
V
DD
(see test circu it, figure 5)
700
5.4 Charge Reverse Reco very
15.5
Current
ns ns
nC nC
ns ns ns
A A
ns
µ
A
C
SafeOperating Area Thermal Impedance
3/8
Loading...
+ 5 hidden pages