SGS Thomson Microelectronics STW5NB100 Datasheet
®
N - CHANNEL 1000V - 4Ω - 4.3A - TO-247
TYPE V
DSS
STW5NB100 1000 V < 4.4 Ω 4.3 A
R
DS(on)
I
D
STW5NB100
PowerMESH MOSFET
PRELIMINARY DATA
■ TYPICAL R
■ EXTREME LY HIGH dv/dt CAP A BI LIT Y
■ ± 30V GATE TO SOURCE VOLTA GE RA TING
■ 100% AVALANCHE TESTED
■ LOW INTRINSIC CAPACITANCE
■ GATE CHARGE MINIMIZED
■ REDUCED VOLTAGE SPRE AD
DS(on)
= 4 Ω
DESCRIPTIO N
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristic s.
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SWITCH MODE POWER SUPPLY (SMPS)
■ DC-AC CONVE RTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SU PP LY AN D MOT OR DRIVE
3
2
1
TO-247
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
IDM(•) Drain Current (pulsed) 17 A
P
dv/dt(1) Peak Diode Recovery voltage slope 4 V/ns
T
(•) Pulse width limited by safe operating area (1) ISD ≤ 4 Α, di/dt ≤ 200 A/µs, VDD ≤ V
June 1998
DS
DGR
GS
I
D
I
D
tot
stg
T
j
Drain-source Voltage (VGS = 0) 1000 V
Drain- gate Voltage (RGS = 20 kΩ)
1000 V
Gate-source Voltage ± 30 V
Drain Current (continuous) at Tc = 25 oC 4.3 A
Drain Current (continuous) at Tc = 100 oC 2.7 A
Total Dissipation at Tc = 25 oC 160 W
Derating Factor 1.28 W/
Storage Temperature -65 to 150
Max. Operating Junction Temperature 150
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
o
C
1/5
STW5NB100
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x)
j
DD
= 50 V)
0.78
62.5
0.5
300
4.3 A
373 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
1000 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125
DS
o
C
V
= ± 30 V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
345V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10 V ID = 2 A 4 4.4 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
4.3 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 2 A 1.5 3 S
= 0 1400
GS
117
1800
152
7
10
µA
µA
pF
pF
pF
2/5
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