SGS Thomson Microelectronics STW5NA90 Datasheet
TYPE V
STW5NA90
STH5NA90FI
DSS
900 V
900 V
STW5NA90
STH5NA90FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
R
DS(on)
<2.5Ω
<2.5Ω
I
D
5.3 A
3.5 A
■ TYPICALR
■ ±
30 V GATE-TO-SOURCEVOLTAGE
DS(on)
=2.1 Ω
RATING
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHEDATAAT 100
■ GATECHARGEMINIMISED
■ REDUCEDTHRESHOLD VOLTAGESPREAD
o
C
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODEPOWER SUPPLY (SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTORDRIVE
ABSOLUTE MAXIMUM RATINGS
3
2
1
1
TO-247 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
3
2
Symbol Parameter Valu e Unit
ST W5NA90 ST H5N A90 FI
V
V
DGR
V
I
DM
P
Drain-source V oltage (VGS= 0 ) 900 V
DS
Drain- gate Voltage (RGS=20kΩ)
Gate-s ource Volt age ± 30 V
GS
I
Drain Current (continuous) at Tc=25oC5.33.5A
D
I
Drain Current (continuous) at Tc=100oC3.42.2A
D
900 V
(•) Drain Current (pulsed ) 21.2 21.2 A
Total Dissipation at Tc=25oC 150 60 W
tot
Derat ing Fa c t or 1.2 0.48 W/
V
T
(•) Pulsewidth limited by safe operatingarea
Ins ulation W ithstand Volt a ge (D C) 4000 V
ISO
Storage T emperat ure -65 to 150
stg
T
Max. Operating Junct i on Tem pe r ature 150
j
January 1998
o
C
o
C
o
C
1/6
STW5NA90-STH5NA90FI
THERMAL DATA
TO - 2 47 IS O WATT 218
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Va lue Uni t
I
AR
E
Ther mal Resist ance Junction-c a s e Max 0.83 2.08
Ther mal Resist ance Junction-ambient M ax
Ther mal Resist ance Case-sink Ty p
Maximum Lead T e mperature Fo r Soldering Pur p ose
l
Avalanche C ur rent, Rep et it i v e or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
30
0.1
300
5.3 A
520 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
900 V
Breakdown Voltage
I
I
DSS
GSS
Zer o Gate Vo ltage
Drain Cur rent (V
GS
Gat e-body Leak a ge
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=100oC
DS
= ± 30 V
V
GS
25
250
±100 nA
ON (∗)
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
2.25 3 3.75 V
Voltage
R
DS(on)
I
D(on)
Stati c D rain-source On
Resistance
VGS=10V ID=2.5A
=10V ID=2.5A Tc=100oC
V
GS
On St at e D rain Cu r re nt VDS>I
D(on)xRDS(on)max
5.3 A
2.1 2.5
5
VGS=10V
DYNAMIC
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capaci t an ce
iss
Out put Capacitance
oss
Reverse T rans fer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=2.5A 4 6.4 S
VDS=25V f=1MHz VGS= 0 1350
150
40
1900
210
60
µA
µA
Ω
Ω
pF
pF
pF
2/6
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