SGS Thomson Microelectronics STW5NA100 Datasheet
TYPE V
STW5NA100
STH5NA100FI
DSS
1000 V
1000 V
STW5NA100
STH5NA100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
R
DS(on)
< 3.5 Ω
< 3.5 Ω
I
D
4.6 A
2.9 A
■ TYPICAL R
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
■ GATE CHARGE MINIMISED
■ REDUCED THRESHOLD VO LTA GE SPREA D
DS(on)
= 2.9 Ω
o
C
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SWITCH MODE POWER SUPPLY (SMPS)
■ DC-AC CONVE RTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
3
2
1
1
TO-247 ISOWATT2 18
INTER NAL SCH E M ATI C DIAG RA M
3
2
Symbol Parameter Value Unit
STW5NA100 STH5NA100FI
V
V
V
DS
DGR
GS
I
D
I
D
Drain-source Voltage (VGS = 0) 1000 V
Drain- gate Voltage (RGS = 20 kΩ)
1000 V
Gate-source Voltage ± 30 V
Drain Current (continuous) at Tc = 25 oC 4.6 2.9 A
Drain Current (continuous) at Tc = 100 oC 2.9 1.8 A
IDM(•) Drain Cu rrent (pulsed) 18.4 18.4 A
P
Total Dissipation at Tc = 25 oC 150 60 W
tot
Derating Factor 1.2 0.48 W/oC
V
T
(•) Pulse width limited by safe operating area
Insulation Withstand Voltage (DC) 4000 V
ISO
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
October 1997
o
C
o
C
1/6
STW5NA100-ST H5NA100FI
THERMAL DATA
TO-247 ISOWATT218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Thermal Resistance Junction-case Max 0.83 2.1
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x, δ < 1%)
j
= 50 V)
DD
30
0.1
300
4.2 A
160 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
1000 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 100 oC
DS
V
= ± 30 V
GS
50
250
±100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
2.25 3 3.75 V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID = 2.1 A 2.9 3.5 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
4.2 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 2.1 A 2 5.5 S
31
2150
165
41
= 0 1650
GS
127
µA
µA
Ω
pF
pF
pF
2/6
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