SGS Thomson Microelectronics STW55NE10 Datasheet
STW55NE10
N - CHANNEL 100V - 0.021Ω - 55A - TO247
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST W55NE10 100 V <0. 027 Ω 55 A
■ TYPICALR
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE AT100
■ APPLICATIONORIENTED
DS(on)
= 0.021 Ω
o
C
CHARACTERIZATION
DESCRIPTION
This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process.The resulting transi-
stor showsextremelyhigh packing densityfor low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ MOTORCONTROL, AUDIO AMPLIFIERS
■ DC-DC& DC-ACCONVERTERS
■ AUTOMOTIVEENVIRONMENT
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt (
T
(•) Pulsewidth limited by safeoperating area (1)ISD≤ 55 A, di/dt ≤ 300 A/µs, VDD≤ V
January 1999
Dra in- sour c e Volt age (VGS= 0) 100 V
DS
Dra in- gat e Voltage (RGS=20kΩ) 100 V
DGR
Gat e-source Volt age ± 20 V
GS
I
Dra in Cu rr ent ( c ont inuous) at Tc=25oC55A
D
I
Dra in Cu rr ent ( c ont inuous) at Tc=100oC35A
D
(•) D rain Cu rr ent ( p uls ed ) 220 A
Tot al Dissipation at Tc=25oC 180 W
tot
Der ati ng Fact or 1.2 W/
1) Peak Diode Recovery v olt age sl ope 9 V/ns
St orage Tem pe r at ure -65 to 175
stg
T
Max. Operating J unction Temperature 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STW55NE10
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max V alue Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead Temperature For So ldering Purpos e
l
Avalanche Current, R epetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanche Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
0.83
30
0.1
300
55 A
350 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Tes t Conditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 100 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Tes t Conditions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
Gate Threshold Volt age VDS=VGSID= 250 µ A22.64V
Sta t ic Drain-s our c e On
VGS=10V ID= 27 .5 A 0.021 0.027
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on )max
55 A
VGS=10V
DYNAMIC
Symbol Parameter Tes t Conditions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=25 A 10 35 S
VDS=25V f=1MHz VGS= 0 4350
500
175
µ
µA
Ω
pF
pF
pF
A
2/8
STW55NE10
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Tes t Conditions Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=50V ID=25A
R
G
=4.7
Ω
VGS=10V
25
10034135
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Char g e
gs
Gate-Drain Charge
gd
VDD=80V ID=50A VGS= 10 V 123
24
47
165
32
64
SWITCHING OFF
Symbol Parameter Tes t Conditions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off-volt age Rise Time
Fall T ime
f
Cross-over Tim e
c
VDD=80V ID=55A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
45
35
65
60
47
88
SOURCEDRAIN DIODE
Symbol Parameter Tes t Conditions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
55
220
(pulsed)
(∗)ForwardOnVoltage ISD=55A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 55 A di/dt = 100 A/µs
=30V Tj= 150oC
V
DD
(see test circuit, figure 5)
155
815
210
1100
Charge
Reverse Recovery
10.5
15
Current
ns
ns
nC
nC
nC
ns
ns
ns
A
A
ns
nC
A
SafeOperating Area ThermalImpedance
3/8
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