SGS Thomson Microelectronics STW50N10 Datasheet
STW50N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
STW50N10 100 V < 0.035 Ω 50 A
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHE DATA AT 100
■ HIGH CURRENTCAPABILITY
o
■ 175
■ APPLICATIONORIENTED
COPERATINGTEMPERATURE
DS(on)
=0.027 Ω
o
C
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ POWERMOTORCONTROL
■ DC-DC& DC-AC CONVERTERS
■ SYNCRONOUSRECTIFICATION
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
DGR Drain- gate Voltag e (R
V
I
DM
P
T
(•) Pulsewidth limitedby safe operating area ISD≤ 60 A, di/dt ≤ 200 A/µs,VDD≤ V
January 1998
Drain-s ou r ce V olt age ( VGS= 0) 100 V
DS
=20kΩ)
GS
Gate-source Voltage ± 20 V
GS
I
Drain Current (c ontinuous ) at Tc=25oC50A
D
I
Drain Current (c ontinuous ) at Tc=100oC35A
D
100 V
(•) Drain Current (pulsed) 200 A
Tot al Di s sipa t ion at Tc=25oC 180 W
tot
Derating Factor 1.2 W/
Storage Temperature -65 to 175
stg
T
Max. Operating J un c tion T emperature 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STW50N10
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Value Uni t
I
AR
E
Ther mal Resist ance Junction- case Max
Ther mal Resist ance Junction- ambient Max
Ther mal Resist ance Case-sink Ty p
Maximum Lead Temperat ure For Soldering Purpose
l
Avalanche Current, Repetit ive or Not- Re petitive
(pulse w idth limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max, δ <1%)
j
0.83
30
0.1
300
50 A
400 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Un it
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
100 V
Breakdown Voltage
I
I
DSS
GSS
Zer o Gate Vo lt age
Drain Cur re nt (V
GS
Gat e-body Leakage
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125
DS
o
C
= ± 20 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Un it
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
234V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID= 25 A 0.027 0.035 Ω
Resistance
I
D(on)
On State Drain Cu rr e nt VDS>I
D(on)xRDS(on)max
50 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Un it
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capaci t an c e
iss
Out put Capa citanc e
oss
Reverse Transfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=25A 20 45 S
VDS=25V f=1MHz VGS= 0 4100
600
150
5200
800
200
µA
µA
pF
pF
pF
2/8
STW50N10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Un it
t
d(on)
Q
Q
Q
Turn-on Time
Rise Tim e
t
r
Total Gate Charge
g
Gat e-Sour ce Charge
gs
Gate-Drain Charge
gd
VDD=50V ID=25A
=4.7 Ω VGS=10V
R
G
VDD=80V ID=50A VGS= 10 V 120
25
75
20
50
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Un it
t
r(Voff)
t
t
Of f - voltage Rise T im e
Fall Time
f
Cross-ov er Tim e
c
VDD=80V ID=50A
=4.7 Ω VGS=10V
R
G
30
35
65
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Un it
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse widthlimited by safeoperating area
1)I
≤ 60 A, di/dt≤ 200 A/µs, VDD≤ V
(
SD
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For ward O n Voltage ISD=50A VGS=0 1.5 V
Reverse Recover y
rr
Time
Reverse Recover y
rr
= 50 A di/dt = 10 0 A/µs
I
SD
=30V Tj=150oC
V
DD
Charge
Reverse Recover y
Current
(BR)DSS,Tj≤TJMAX
35
105
170 nC
45
50
95
50
200
200
1.4
14
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area ThermalImpedance
3/8
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