SGS Thomson Microelectronics STW47NM60 Datasheet
STW47NM60
N-CHANNEL 600V - 0.075Ω -47ATO-247
MDmesh™Power MOSFET
ADVANCED DATA
TYPE V
DSSRDS(on)Rds(on)*Qg
I
D
STW47NM60 600V < 0.09Ω 7.2 Ω*nC 47 A
TYPICAL RDS(on) = 0.075Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
This im prov ed version ofMDmesh™ which isbased
on Multiple Drain process represents the new
benchmark in high vo ltage MOSFETs.The resulting
product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company ’s proprietary
strip technique yields overall performances that a re
significantly better than that of similar competition’s
products.
APPLICATIONS
The MDmesh™ family is verysuitable forincreasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
T
stg
T
j
(•)Pulse width limited by safe operating area
January 2003
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
600 V
600 V
Gate- source Voltage ±30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 180 A
Total Dissipation at TC= 25°C
47 A
28 A
417 W
Derating Factor 3.33 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1) ISD≤47A, di/dt≤400A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
1/6
STW47NM60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.3 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=35V)
j
15 A
850 mJ
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µA, VGS= 0 600 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±30 V ±100 nA
GS
10 µA
100 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID= 23.5 A
= 250 µA
345V
0.075 0.09 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 1250 pF
Reverse Transfer
Capacitance
C
(2) Equivalent Output
oss eq.
Capacitance
R
G
1. Pulsed: Pulseduration= 300µs, dutycycle 1.5 %.
2. C
Gate Input Resistance f=1 MHz Gate DC Bias = 0
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
V
DSS
D(on)xRDS(on)max,
ID= 23.5 A
V
=25V,f=1MHz,VGS=0
DS
VGS=0V,VDS= 0 V to 480 V 340 pF
Test Signal Level = 20 mV
Open Drain
oss
15 S
3800 pF
46 pF
1.4 Ω
when VDSincreases from 0 to 80%
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