SGS Thomson Microelectronics STW47NM50 Datasheet
STW47NM50
N-CHANNEL 500V - 0.065Ω -45ATO-247
MDmesh™Power MOSFET
ADVANCED DATA
TYPE V
DSS
R
DS(on)Rds(on)*QgID
STW47NM50 500V < 0.085Ω 5.6 Ω*nC 45 A
TYPICAL RDS(on) = 0.065Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yiel ds overall
dynamic performancethat issignificantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is verysuitable forincreasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
T
stg
T
j
(•)Pulse width limited by safe operating area
January 2003
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
500 V
500 V
Gate- source Voltage ±30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 180 A
Total Dissipation at TC= 25°C
45 A
28.4 A
417 W
Derating Factor 2.08 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1) ISD≤45A, di/dt≤400A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
1/6
STW47NM50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.3 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=35V)
j
20 A
810 mJ
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µA, VGS= 0 500 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±30 V ±100 nA
GS
10 µA
100 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID= 22.5 A
= 250 µA
345V
0.065 0.085 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 610 pF
Reverse Transfer
Capacitance
C
(2) Equivalent Output
oss eq.
Capacitance
R
G
1. Pulsed: Pulse duration = 300 µs, duty cycle1.5 %.
2. C
Gate Input Resistance f=1 MHz Gate DC Bias = 0
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
D(on)xRDS(on)max,
ID= 22.5A
V
=25V,f=1MHz,VGS=0
DS
VGS=0V,VDS= 0V to 400V 325 pF
Test Signal Level = 20mV
Open Drain
oss
20 S
3700 pF
50 pF
1.7 Ω
when VDSincreases from 0 to 80%
2/6
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