SGS Thomson Microelectronics STW45NM50 Datasheet
STW45NM50
N-CHANNEL 500V - 0.07Ω - 45A TO-247
MDmeshPower MOSFET
PRELIMINARY DATA
TYPE V
STW45NM50 500V <0.09Ω 45 A
■ TYPICAL R
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
DS
DSS
(on) = 0.07Ω
R
DS(on)
I
D
CHARGE
■ LOW GATEINPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh is a new revolutionary MOSFET
technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal
layout. The resulting producthas an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performancethat is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh family isvery suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt Peak Diode Recovery voltage slope 6 V/ns
T
stg
T
j
(•)Pulse width limitedby safe operating area
June 2000
Drain-source Voltage (VGS= 0) 500 V
Drain-gate Voltage (RGS=20kΩ) 500 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC=25°C45A
Drain Current (continuos) at TC= 100°C 28.4 A
(●) Drain Current (pulsed) 180 A
TotalDissipation at TC=25°C
Derating Factor 2.08 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
260 W
1/6
STW45NM50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.48 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
=25°C, ID=IAR,VDD=50V)
j
I
= 250 µA, VGS=0
D
= Max Rating
V
DS
=0)
DS
GS
=0)
V
= Max Rating, TC= 125 °C
DS
= ±30V
V
GS
500 V
45 A
1400 mJ
1 µA
10 µA
±100 nA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
V
DS=VGS,ID
= 10V, ID= 22.5A
V
GS
V
DS>ID(on)xRDS(on)max,
= 250µA
VGS=10V
345V
0.07 0.09 Ω
45 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
(1)
fs
C
iss
C
oss
C
rss
R
G
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward Transconductance
Input Capacitance
Output Capacitance 710 pF
Reverse Transfer
Capacitance
Gate Input Resistance
DS>ID(on)xRDS(on)max,
ID= 22.5A
V
= 25V, f = 1 MHz, VGS=0
DS
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
25 S
4400 pF
110 pF
1.3 Ω
2/6
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