SGS Thomson Microelectronics STW34NB20 Datasheet
STW34NB20
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST W34NB20 200 V < 0.07 5 Ω 34 A
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ VERYLOW INTRINSICCAPACITANCES
■ GATECHARGEMINIMIZED
DS(on)
=0.062 Ω
DESCRIPTION
Using the latesthigh voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ SWITCHMODEPOWER SUPPLIES(SMPS)
■ DC-ACCONVERTERS FORWELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTORDRIVE
■ HIGH CURRENT, HIGH SPEEDSWITCHING
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
V
V
I
DM
P
T
(•) Pulsewidth limitedby safe operating area (1)ISD≤34A, di/dt ≤ 200 A/µs, VDD≤ V
January 1998
Drain-source Voltage (VGS=0) 200 V
DS
DGR Drain- gate Voltage ( R
Gat e- source Voltage ± 30 V
GS
I
Drain Current (con t in uous) at Tc=25oC34A
D
I
Drain Current (con t in uous) at Tc=100oC21A
D
=20kΩ)
GS
200 V
(•) Dra in Current (pulsed) 136 A
Tot al Dissipat i on at Tc=25oC180W
tot
Derating Factor 1.44 W/
Sto rage Tem pe r ature -65 to 150
stg
T
Max. Operat ing Ju nc t io n Temper at u r e 150
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/8
STW34NB20
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Va lue Uni t
I
AR
E
Ther mal Resist ance Junction-c a s e Max
Ther mal Resist ance Junction-ambient Max
Ther mal Resist ance Case-sink Typ
Maximum Lead Te mperatu re Fo r Soldering Purpos e
l
Avalanche Curre nt, Repet it ive o r Not-Repetitive
(pulse w idth limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
0.69
30
0.1
300
34 A
650 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
200 V
Breakdown Volt age
I
DSS
I
GSS
Zer o Gate Vo lt age
Drain Cur rent (V
GS
Gat e-body Leakage
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125oC
DS
= ± 30 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
345V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID=17 A 0.062 0. 075 Ω
Resistance
I
D(on)
On State D ra in Current VDS>I
D(on)xRDS(on)max
34 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capaci t an ce
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=17A 8 17 S
VDS=25V f=1MHz VGS= 0 2400
650
90
3300
900
130
µA
µA
pF
pF
pF
2/8
STW34NB20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
t
d(on)
Turn-on Time
r
Rise Time
t
VDD=100V ID=17A
=4.7 Ω VGS=10V
R
G
30
40
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Source Charge
gs
Gate-Drain Charge
gd
VDD=160V ID=34 A VGS=10V 60
19
29
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
t
r(Voff)
t
t
Of f - voltage Rise Time
Fall Time
f
Cross-over Tim e
c
VDD=160V ID=34A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
17
18
35
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse widthlimited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For ward On Voltage ISD=34A VGS=0 1.5 V
Reverse R ec overy
rr
Time
Reverse R ec overy
rr
= 34 A di/dt = 100 A/µs
I
SD
=50V Tj=150oC
V
DD
(see test circuit, figure 5)
Charge
Reverse R ec overy
Current
40
55
80 nC
23
24
47
34
136
290
2.7
18.5
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area ThermalImpedance
3/8
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