SGS Thomson Microelectronics STW33N20 Datasheet

STW33N20

N - CHANNEL ENHANCEMENT MODE

POWER MOSFET

TYPE V

DSS

R

DS(on)

I

D

STW33N20 200 V < 0.085 Ω 33 A

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ 100% AVALANCHETESTED

■ REPETITIVEAVALANCHEDATAAT 100

■ LOW GATE CHARGE

■ HIGH CURRENTCAPABILITY

■ 150

■ APPLICATIONORIENTED

o

C OPERATINGTEMPERATURE

DS(on)

=0.073 Ω

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEEDSWITCHING

■ SOLENOIDANDRELAY DRIVERS

■ DC-DCCONVERTERS &DC-AC INVERTERS

■ TELECOMMUNICATION POWER SUPPLIES

■ INDUSTRIAL MOTOR DRIVES

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DGR

V

I

DM

P

T

(•) Pulsewidth limitedby safe operating area

October 1997

Drain-s ou r ce Voltage (VGS= 0) 200 V

DS

Drain- gate Voltage (RGS=20kΩ) Gate-source Voltage ± 20 V

GS

I

Drain Curren t (cont inu ous) at Tc=25oC33A

D

I

Drain Curren t (cont inu ous) at Tc=100oC20A

D

200 V

(•) Drain Curren t (pulsed) 132 A

Tot al Di s sipa t ion at Tc=25oC 180 W

tot

Derat ing Fa c tor 1.44 W/ Storage Temperature -65 to 150

stg

T

Max. Operat ing Junct ion Temperature 150

j

o

C

o

C

o

C

1/9

STW33N20

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symbol Para met e r Max Va lue Uni t

I

AR

E

Ther mal Resist ance Junction-c a s e Max Ther mal Resist ance Junction-ambient Max Ther mal Resist ance Case-sink Ty p Maximum Lead Te mperatu re Fo r Soldering Purp ose

l

Avalanche Curre nt, Repet it ive o r N ot-Repet it iv e (pulse w idth limited by T

Single Pulse Avalanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max, δ <1%)

j

0.66 30

0.1

300

33 A

600 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Test C ondition s Min. Typ. M ax. Unit

V

(BR)DSS

Drain-source

=250µAVGS=0

I

D

200 V

Breakdown Volt age

I

DSS

GSS

Zer o Gate Vo lt age Drain Cur rent (V

GS

Gat e-body Leakage Current (V

DS

=0)

=MaxRating

V

DS

V

= M ax Ra t ing Tc=100

DS

o

C

= ± 20 V

V

GS

10

100

± 100 nA

ON (∗)

Symbol Parameter Test C ondition s Min. Typ. M ax. Unit

V

GS(th )

Gate Threshold

V

DS=VGSID

=250µA

234V

Voltage

R

DS(on)

Stati c Drain-so urce On

VGS=10V ID= 16 A 0.073 0.085 Ω

Resistance

I

D(on)

On State Drain Curr e nt VDS>I

D(on)xRDS(on)max

33 A

VGS=10V

DYNAMIC

Symbol Parameter Test C ondition s Min. Typ. M ax. Unit

g

(∗)Forward

fs

Tr ansconductance

C

Input Capaci t an ce

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capa cit an c e

VDS>I

D(on)xRDS(on)maxID

=16A 10 22 S

VDS=25V f=1MHz VGS= 0 3500

550 120

4500

700 160

µA µA

pF pF pF

2/9

STW33N20

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test C ondition s Min. Typ. M ax. Unit

t

d(on)

t

r

Turn-on Time Rise Time

VDD=100V ID=16A

=4.7 Ω VGS=10V

R

G

25 50

(see test circuit, figure 3)

(di/dt)

Turn-on Current Slope VDD=160V ID=33A

on

=4.7 Ω VGS=10V

R

G

800 A/µs

(see tes t cir c uit , f igu r e 5)

Q

Total Gate Charge

g

Gat e-Source Charge

gs

Gate-Drain Charge

gd

VDD=160V ID=33A VGS= 10 V 110

17 50

SWITCHINGOFF

Symbol Parameter Test C ondition s Min. Typ. M ax. Unit

t

r(Voff)

t

Of f - voltage Rise Time Fall Time

f

Cross-over Tim e

c

VDD=160V ID=33A

=4.7 Ω VGS=10V

R

G

(see test circuit, figure 5)

30 30 60

SOURCE DRAIN DIODE

40 70

160 nC

45 45 90

ns ns

nC nC

ns ns ns

Symbol Parameter Test C ondition s Min. Typ. M ax. Unit

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

33

132

(pulsed)

(∗) For ward On V o lt age ISD=10A VGS=0 1.6 V

V

SD

t

Q

Reverse R ec overy

rr

Time Reverse R ec overy

rr

= 33 A di/d t = 100 A /µ s

I

SD

V

=100V Tj=150oC

DD

(see test circuit, figure 5)

400

5.6

Charge

I

RRM

Reverse R ec overy

28

Current

(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 % (•) Pulse widthlimited by safe operating area

Safe Operating Area ThermalImpedance

A A

ns

µC

A

3/9