SGS Thomson Microelectronics STW26NM60 Datasheet
1/8September 2002
STW26NM60
N-CHANNEL 600V - 0.125Ω - 26A TO-2 47
Zener-Protected MDmesh™Power MOSFET
n
TYPICAL RDS(on) = 0.125Ω
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
IMPROVED ESD CAPABILITY
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESIST ANC E
DESCRIPTION
The MDmesh™
is a new revolutionary MOSFET
technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
TYPE V
DSS
R
DS(on)
I
D
STW26NM60 600 V < 0.135 Ω 30 A
SALES TYPE MARKING PACKAGE PACKAGING
STW26NM60 W26NM60 TO-247 TUBE
TO-247
INTERNAL SCHEMATIC DIAGRAM
STW26NM60
2/8
ABSOLUTE MAXIMUM RATINGS
(l) Pulse wi dth limited by safe operating area
(1) I
SD
≤26A, di/dt ≤200A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX.
THERMA L D ATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS = 0)
600 V
V
DGR
Drain-gate Voltage (RGS = 20 kΩ)
600 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at TC = 25°C
30 A
I
D
Drain Current (continuous) at TC = 100°C
18.9 A
I
DM
(l)
Drain Current (pulsed) 120 A
P
TOT
Total Dissipation at TC = 25°C
313 W
Derating Factor 2.5 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 6000 V
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150 °C
Rthj-case Thermal Resistance Junction-case Max 0.4 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300
°C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
13 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID = IAR, VDD = 50 V)
740 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igss=± 1mA (Open Drain) 30 V
3/8
STW26NM60
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.
2. Pulse width li mited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0 600 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
VDS = Max Rating, TC = 125 °C
10
100
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20V ±10 µA
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS, ID = 250µA
345V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 13 A 0.125 0.135 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS = 15 V, ID= 13 A 20 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, VGS = 0 2900
900
40
pF
pF
pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
VDD = 300V, ID = 13 A
RG= 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
35
22
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480V, ID = 26 A,
V
GS
= 10V
73
20
37
102
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480V, ID = 26 A,
RG=4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
14
20
40
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
26
104
A
A
VSD (1)
Forward On Voltage
ISD = 26 A, VGS = 0
1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 26 A, di/dt = 100A/µs
V
DD
= 100 V, Tj = 25°C
(see test circuit, Figure 5)
450
7
30.5
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 26 A, di/dt = 100A/µs
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
560
9
32.5
ns
µC
A
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