SGS Thomson Microelectronics STW26NM50 Datasheet
1/8February 2003
STW26NM50
N-CHANNEL 500V - 0.10Ω -26ATO-247
Zener-Protected MDmesh™Power MOSFET
TYPICAL RDS(on) = 0.10Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain process with the Company’s PowerMES H ™ horizontal
layout. Theresulting produc t has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic perfo rmance that issignificantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increas ing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
TYPE V
DSS
R
DS(on)
I
D
STW26NM50 500 V < 0.120 Ω 30 A
SALES TYPE MARKING PACKAGE PACKAGING
STW26NM50 W26NM50 TO-247 TUBE
TO-247
INTERNAL SCHEMATIC DIAGRAM
STW26NM50
2/8
ABSOLUTE MAXIMUM RATINGS
() Pulse width limited by safe operating area
(1) I
SD
≤26A, di/dt ≤200A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been desig ned to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These i ntegrated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS=0)
500 V
V
DGR
Drain-gate Voltage (RGS=20kΩ)
500 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at TC= 25°C
30 A
I
D
Drain Current (continuous) at TC= 100°C
18.9 A
I
DM
()
Drain Current (pulsed) 120 A
P
TOT
Total Dissipation at TC= 25°C
313 W
Derating Factor 2.5 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 6000 V
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150 °C
Rthj-case Thermal Resistance Junction-case Max 0.4 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300
°C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
13 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID=IAR,VDD=50V)
740 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igss=± 1mA (Open Drain) 30 V
3/8
STW26NM50
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SP ECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe o perating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when VDSincreases from 0 to 80%
V
DSS
.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID= 250 µA, VGS= 0 500 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
VDS= Max Rating, TC= 125 °C
10
100
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ± 20V ±10 µA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID
= 250µA
345V
R
DS(on)
Static Drain-source On
Resistance
VGS=10V,ID= 13 A 0.1 0.12 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS=15V,ID=13A 20 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
=25V,f=1MHz,VGS= 0 3000
700
50
pF
pF
pF
C
oss eq.
(3) Equivalent Output
Capacitance
VGS=0V,VDS= 0V to 400V 300 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
VDD=250V,ID=13A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
28
25
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=400V,ID=26A,
V
GS
=10V
76
20
36
106
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400V, ID=26A,
R
G
=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)
13
19
36
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
26
104
A
A
V
SD
(1)
Forward On Voltage
ISD=26A,VGS=0
1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 26 A, di/dt = 100A/µs
V
DD
=100V,Tj=25°C
(see test circuit, Figure 5)
400
5.5
27.8
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 26 A, di/dt = 100A/µs
V
DD
=100V,Tj=150°C
(see test circuit, Figure 5)
492
7
28.8
ns
µC
A
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