SGS Thomson Microelectronics STW20NM50 Datasheet
STW20NM50
N-CHANNEL 500V - 0.20Ω - 20A TO-247
MDmesh™Power MOSFET
TYPE V
DSS
R
DS(on)
I
D
STW20NM50 500V < 0.25Ω 20 A
n
TYPICAL RDS(on) = 0.20Ω
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESIST ANC E
n
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™
is a new revolutionary MOSFET
technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
T
stg
T
j
(•)Pu l se width limite d by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
500 V
500 V
Gate- source Voltage ±30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
(l)
Drain Current (pulsed) 80 A
Total Dissipation at TC = 25°C
20 A
12.6 A
214 W
Derating Factor 1.44 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1) ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX.
1/8August 2002
STW20NM50
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 0.585 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = 5 A, VDD = 35 V)
j
10 A
650 mJ
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA, VGS = 0 500 V
Breakdown Voltage
ON
I
I
GSS
(1)
DSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±30V ±100 nA
GS
1µA
100 µA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 10A
345V
0.20 0.25 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 285 pF
Reverse Transfer
Capacitance
(2) Equivalent Output
Capacitance
R
G
1. Pulsed: Pu l se duration = 300 µs, duty cyc l e 1.5 %.
2. C
Gate Input Resistance f=1 MHz Gate DC Bias = 0
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
V
.
DSS
I
= 10A
D
V
DS
VGS = 0V, VDS = 0V to 400V 130 pF
Test Signal Level = 20mV
Open Drain
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
10 S
1480 pF
34 pF
1.6 Ω
when VDS increase s fr om 0 to 80%
oss
2/8
STW20NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 16 ns
Total Gate Charge
Gate-Source Charge 13 nC
Gate-Drain Charge 19 nC
SWITCHING OFF
Symbol Param eter Test Conditions Min. Typ. Max. U nit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time 8.5 ns
Cross-over Time 23 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
Note: 1. Pulsed: Pulse duration = 300 µ s, duty cycle 1.5 %.
2. Pulse width lim i t ed by safe operating area.
(2)
Source-drain Current 20 A
Source-drain Current (pulsed) 80 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charg e
Reverse Recovery Curren t
Reverse Recovery Time
Reverse Recovery Charg e
Reverse Recovery Curren t
= 250V, ID = 10 A
DD
RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
V
= 400 V, ID = 20 A,
DD
V
= 10 V
GS
V
= 400 V, ID = 20 A,
DD
RG= 4.7Ω, V
GS
= 10 V
(see test circuit, Figure 5)
ISD = 20 A, VGS = 0
= 20 A, di/dt = 100 A/µs,
I
SD
V
= 100 V, Tj = 25°C
DD
(see test circuit, Figure 5)
= 20 A, di/dt = 100 A/µs,
I
SD
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
24 ns
40 56 nC
9ns
1.5 V
350
4.6
26
435
5.9
27
ns
µC
A
ns
µC
A
Safe Operating Area
Ther m al Imp e d ance
3/8
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