SGS Thomson Microelectronics STW20NB50 Datasheet



STW20NB50

N - CHANNEL 500V - 0.22Ω - 20A - TO-247

PowerMESH MOSFET

TYPE V

DSS

R

DS(on)

I

D

ST W20NB 50 500 V < 0.25 Ω 20 A

■ TYPICALR

■ EXTREMELYHIGH dv/dt CAPABILITY

■ ± 30V GATE TO SOURCEVOLTAGERATING

■ 100%AVALANCHETESTED

■ REPETITIVEAVALANCHEDATA AT 100

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

DS(on)

= 0.22 Ω

o

C

DESCRIPTION

Using the latest high voltage technology, STMicroelectronics has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R

(on) per area, exceptional avalanche and

DS

dv/dt capabilities and unrivalled gate charge and switchingcharacteristics.

APPLICATIONS

■ HIGHCURRENT, HIGHSPEEDSWITCHING

■ SWITCHMODE POWER SUPPLIES(SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIESAND MOTORDRIVE

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

DM

P

dv/dt(

T

(•) Pulse width limited by safe operating area (1)ISD≤ 20A, di/dt ≤ 200 A/µs, VDD≤ V

October 1999

Drain-source Volta ge (VGS=0) 500 V

DS

Drain- gate Voltage (RGS=20kΩ)

DGR

Gat e-source V oltage ± 30 V

GS

I

Drain Curre nt (cont in uous) at Tc=25oC20A

D

I

Drain Curre nt (cont in uous) at Tc= 100oC 12.7 A

D

500 V

(•) Drain Current (pu lsed) 80 A

Tot al Dissipat ion a t Tc=25oC250W

tot

Derating F act or 2 W/

1) Peak Diode Recover y volt age slope 4 V/ns

Sto rage Tem peratu r e -65 to 15 0

stg

T

Max. Operati ng J unction Temperatu r e 150

j

,Tj≤T

(BR)DSS

JMAX

o

C

o

C

o

C

1/8

STW20NB50

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Para meter Max V alue Uni t

I

AR

E

Ther mal Res is t an c e Junc ti on-case Max Ther mal Res is t an c e Junc ti on-amb ient Max Thermal Resistance Case-sink Typ Maximum Le ad Temper at u r e Fo r Sold ering P ur p os e

l

Avalanche Cu r rent, Repetit ive or Not-Re petit iv e (pulse width limited by T

Single Pulse Ava lanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max, δ <1%)

j

0.5 30

0.1

300

20 A

1000 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

V

(BR)DSS

Drain-sou rc e

=250µAVGS=0

I

D

500 V

Break d own Voltage

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gat e- b ody Le akage Current (V

DS

=0)

V

=MaxRating

DS

= Max Rating Tc=125oC

V

DS

= ± 30 V

V

GS

10

100

± 100 nA

ON(∗)

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

DS=VGSID

= 250 µA

345V

Voltage

R

DS(on)

Static Drain-source O n

VGS=10V ID= 10 A 0.22 0.2 5

Resistance

I

D(on)

On State Dra in Cur rent VDS>I

D(on)xRDS(on)max

20 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr anscond uctance

C

Input Capaci t an c e

iss

Out put Capacitance

oss

Reverse Transf er

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=10A 9 13.5 S

VDS=25V f=1MHz VGS= 0 3600

460

55

4700

600

75

µA µA

Ω

pF pF pF

2/8

STW20NB50

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time Rise Time

VDD= 250 V ID=10A R

=4.7

G

Ω

VGS=10V

32 15

43 21

(see test circuit, figure 3)

Q Q Q

Total Gate Charge

g

Gat e- Sour ce Cha rge

gs

Gate-Drain Charge

gd

VDD= 400 V ID=20A VGS=10V 85

21 37

110 nC

SWITCHINGOFF

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage Rise Time Fall Time

f

Cross-over Ti m e

c

VDD= 400 V ID=20A

=4.7 ΩVGS=10V

R

G

(see test circuit, figure 5)

20 25 47

27 33 62

SOURCEDRAINDIODE

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operatingarea

Source-drain Curr ent

(•)

Source-drain Curr ent

20 80

(pulsed)

(∗) For ward On V oltage ISD=20A VGS=0 1.6 V

Reverse Recovery

rr

Time Reverse Recovery

rr

= 20 A di / dt = 100 A/µs

I

SD

= 100 V Tj=150oC

V

DD

(see test circuit, figure 5)

700

9 Charge Reverse Recovery

25

Current

ns ns

nC nC

ns ns ns

A A

ns

µ

A

C

SafeOperating Area ThermalImpedance

3/8