SGS Thomson Microelectronics STW20NA50 Datasheet
STW20NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
STW20NA50 500 V < 0.27 Ω 20 A
■ TYPICAL R
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
DS(on)
= 0.22 Ω
o
C
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The optimized cell layout coupled with a new proprietary
edge termination concur to give the device low
R
and gate charge, unequalled ruggedness
DS(on)
and superior switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
V
V
V
I
DM
P
T
(•) Pulsewidth limited bysafe operating area
December 1996
Drain - s ource Voltage (VGS= 0) 500 V
DS
Drain- gate Voltage (RGS=20kΩ) 500 V
DGR
Gate-source Voltage ± 30 V
GS
Drain Current (continuous) at Tc=25oC20A
I
D
Drain Current (continuous) at Tc=100oC12.7A
I
D
(•) Drain Current (pulsed) 80 A
Total Di ssipation at Tc=25oC 250 W
tot
Derating F actor 2 W/
St or a ge Tem perature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
o
C
1/9
STW20NA50
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e
l
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng Tj=25oC, ID=IAR,VDD=50V)
Repetitive Avalanc he Energ y
AR
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
0.5
30
0.1
300
20 A
1000 mJ
8mJ
12.7 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 500 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Volt age
Drain Current (V
GS
Gat e- body Leak age
=0)
=MaxRating
V
DS
V
= Max Rating x 0 .8 Tc=125oC
DS
25
250
VGS= ± 30 V ± 100 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
St at ic Drain-s our ce O n
VGS=10V ID= 10 A 0.22 0.27 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
20 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
= 10 A 10 17.5 S
VDS=25V f=1MHz VGS= 0 3600
490
140
4700
650
180
µA
µA
pF
pF
pF
2/9
STW20NA50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on T im e
t
Rise Time
r
Turn-on C urrent S lope VDD=400V ID=20A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage R ise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
VDD=250V ID=10A
RG=4.7 Ω VGS=10V
30
55
(see test circuit, figure 3)
160 A/µs
RG=47 Ω VGS=10V
(see test circuit, figure 5)
VDD= 400 V ID=20A VGS=10V 150
18
72
VDD=400V ID=20A
RG=4.7 Ω VGS=10V
(see test circuit, figure 5)
40
25
75
40
75
195 nC
55
35
100
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
20
80
(pulsed)
V
(∗) Forward On Volt age ISD=20A VGS=0 1.6 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD= 20 A di/dt = 100 A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
610
10.1
Charge
I
RRM
Reverse Recovery
33
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas Thermal Impedance
A
A
ns
µC
A
3/9
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