SGS Thomson Microelectronics STW200NF03 Datasheet
STW200NF03
N-CHANNEL 30V - 0.002 Ω - 120A TO-247
ULTRA LOW ON-RESISTANCE STripFET™ II MOSFET
TYPE
V
DSS
STW200NF03 30V <0.0028
■ TYPICAL R
■ 100% AVALANCHE TESTED
(on) = 0.002 Ω
DS
R
DS(on)
I
D
120A
Ω
DESCRIPTION
This Power MOSFET series realized with STMicroele ctronics unique STripFET process has specifically been
designed to minimize input capacitance and gate charge.
It is particularl y suitable in OR-ing fun ction circuits and
synchronous rectification.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ OR-ING FUNCTION
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
(
I
•)
D
I
D
(
I
••)
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(
Pulse wi dth limited by safe operating ar ea.
••)
(
Current limited by package
•)
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
30 V
30 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
120 A
120 A
Drain Current (pulsed) 480 A
Total Dissipation at TC = 25°C
350 W
Derating Factor 2.33 W/°C
(1)
Peak Diode Recovery voltage slope 1.5 V/ns
(2)
Single Pulse Avalanche Energy 4 J
Storage Temperature
Operating Junction Temperature
≤120A, di/dt ≤200A/µs, VDD ≤ V
(1) I
SD
(2) Starting Tj = 25 oC, ID = 60 A, VDD= 15V
-55 to 175 °C
(BR)DSS
, Tj ≤ T
JMAX.
1/8October 2002
STW200NF03
THERMA L D ATA
Rthj-case
Rthj-amb
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
l
Max
Max
Typ
0.43
50
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source Breakdown
= 250 µA, VGS = 0
D
30 V
Voltage
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 20V
GS
1
10
±100 nA
ON
(1)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
V
= 10 V ID = 60 A
GS
= 250 µA
D
234V
0.002 0.0028
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 15 V ID = 60 A
DS
= 25V, f = 1 MHz, VGS = 0
V
DS
200 S
10
3.35
385
µA
µA
Ω
nF
nF
pF
2/8
STW200NF03
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 15 V ID = 60 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 10 V
G
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
=15V ID=120A VGS= 10 V
V
DD
(see test circuit, Figure 4)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 15 V ID = 60 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 10 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1. 5 %.
(
•)Pulse width limited by safe operating ar ea.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 120 A VGS = 0
SD
= 120 A di/dt = 100A/µs
I
SD
V
= 20 V Tj = 150°C
DD
(see test circuit, Figure 5)
50
300
210
63.5
63.5
100
80
90
250
5.5
280 nC
120
480
1.3 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Thermal ImpedanceSafe Operating Area
3/8
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