SGS Thomson Microelectronics STW18NB40, STH18NB40FI Datasheet
STW18NB40
®
STH18NB40FI
N-CHANNEL 400V - 0.19Ω - 18.4A TO-247/ISOWATT218
PowerMESH MOSFET
PRELIMINARY DATA
TYPE V
STW18NB40
STH18NB40FI
■ TYPICAL R
■ EXTREM E LY HIG H dv/ dt CAP ABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DS(on)
DSS
400 V
400 V
= 0.19 Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching char acteristics.
R
DS(on)
< 0.26 Ω
< 0.26 Ω
I
D
18.4 A
12.4A
3
2
1
1
TO-247 ISOWA TT218
INTER NAL SCH E M ATI C DIAG RA M
3
2
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SWITC H MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVE RTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW18NB40 STH18NB40FI
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1) ISD ≤18.4 A, di/dt ≤ 200 A/µs, VDD ≤ V
Drain-source Voltage (VGS = 0) 400 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
Drain Current (continuous) at Tc = 25 oC 18.4 12.4 A
I
D
I
Drain Current (continuous) at Tc = 100 oC 11.6 7.8 A
D
400 V
(•) Drain Current (pulsed) 73.6 73.6 A
Total Dissipation at Tc = 25 oC19080W
tot
Derating Factor 1.52 0.64 W/
1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
o
C
June 1998
1/6
STW18NB40-ST H18NB40FI
THERMAL DATA
TO-247 ISOWATT218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Thermal Resistance Junction-case Max 0.66 1.56
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x)
j
DD
= 50 V)
30
0.1
300
18.4 A
400 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
400 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 30 V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
345V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID = 9.2 A 0.19 0.26 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
18.4 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 9.2 A 6.8 9.3 S
= 0 2480
GS
435
47
3230
570
66
µA
µA
pF
pF
pF
2/6
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