SGS Thomson Microelectronics STW16NB60 Datasheet
STW16NB60
N-CHANNEL 600V - 0.3Ω -16ATO-247
PowerMesh™ MOSFET
TYPE V
DSS
R
DS(on)
I
D
STW16NB60 600V < 0.35 Ω 16 A
■ TYPICAL R
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSICCAPACITANCES
■ GATE CHARGE MINIMIZED
(on) = 0.3Ω
DS
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has des igned an a dvanced family of power MOS FETs with outstanding
performances. The n ew patent pending strip l ay out
coupled with the Company’s proprieratyedge termination structure, gives the lowest RDS (on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt(1) Peak Diode Recovery voltage slope 4 V/ns
T
stg
T
(•)Pulse width limited by safe operating area
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
600 V
600 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C
()
Drain Current (pulsed) 64 A
Total Dissipation at TC= 25°C
16 A
10 A
220 W
Derating Factor 1.76 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
j
(1)ISD≤16A, di/dt ≤100A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
1/8April 2003
STW16NB60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.567 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID=IAR,VDD=50V)
j
ID= 250 µA, VGS= 0 600 V
16 A
600 mJ
Breakdown Voltage
= Max Rating
V
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±30V ±100 nA
GS
1µA
50 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID=8A
= 250 µA
345V
0.3 0.35 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
Forward Transconductance VDS>I
D(on)xRDS(on)max,
ID=8A
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 465 pF
Reverse Transfer
V
=25V,f=1MHz,VGS=0
DS
Capacitance
14.5 S
3300 pF
45 pF
2/8
STW16NB60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
g
Gate-Source Charge 19.5 nC
Gate-Drain Charge 35 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 12 ns
Cross-over Time 30 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe o perating area.
Source-drain Current 16 A
(2)
Source-drain Current (pulsed) 64 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 11 µC
Reverse Recovery Current 27 A
VDD= 300V, ID=8A
R
= 4.7Ω,VGS= 10V
G
(see test circuit, Figure 3)
V
= 480V, ID=16A,
DD
=10V,RG=4.7Ω
V
GS
V
=480V,ID=16A,
DD
RG= 4.7Ω, VGS=10V
(see test circuit, Figure 5)
ISD=16A,VGS=0
I
= 16 A, di/dt = 100 A/µs,
SD
= 100V, Tj= 150°C
V
DD
(see test circuit, Figure 5)
35 ns
16 ns
80 105 nC
15 ns
1.6 V
800 ns
Safe Operating Area Thermal Impedance
3/8
Loading...