STW15NB50
N-CHANNEL 500V - 0.33Ω - 14.6A -
T0-247/ISOWATT218 PowerMESH MOSFET
TYPE V
STW15NB50
STH15NB50FI
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ± 30VGATE TOSOURCE VOLTAGE RATING
■ 100% AVALANCHETESTED
■ VERYLOW INTRINSICCAPACITANCES
■ GATECHARGEMINIMIZED
DS(on)
DSS
500 V
500 V
=0.33 Ω
R
DS(on)
<0.36Ω
<
0.36 Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switchingcharacteristics.
I
D
14.6 A
10.5 A
STH15NB50FI
3
2
1
TO-247 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
1
3
2
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCHMODEPOWER SUPPLIES(SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
STW15NB50 S TH15NB50FI
V
V
V
I
DM
P
dv/dt(
V
T
Drain-source Volt age (VGS=0) 500 V
DS
Drain- gate Voltage (RGS=20kΩ)
DGR
Gat e- sourc e Vo lt age ± 30 V
GS
Drain C urr ent ( contin uous) at Tc=25oC 14.6 10.5 A
I
D
Drain C urr ent ( contin uous) at Tc=100oC9.26.6A
I
D
500 V
(•) Drain C urr ent ( pul s ed ) 58.4 58.4 A
Tot al Diss ip at i on at Tc=25oC19080W
tot
Derat in g Factor 0.64 1.52 W/
1) Peak Diode Re covery voltage s l ope 4 V/ns
Ins ulation W it h s t a nd Voltage (DC) 4000 V
ISO
Sto rage Tempe r ature -65 to 15 0
stg
Max. Operatin g J u nct ion T emper at u r e 150
T
j
o
C
o
C
o
C
June 1998
1/9
STW15NB50- STH15NB50FI
THERMAL DATA
TO - 2 47 IS O WATT218
R
thj-case
R
thj- amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Valu e Uni t
I
AR
E
Ther mal Resist ance Junctio n- case M ax 0.66 1.56
Ther mal Resist ance Junctio n- ambient Max
Ther mal Resist ance Case-si nk Typ
Maximum Lea d Tempera t u re F or Sold eri ng Purp os e
l
Avalanche Curre nt , Repetitive or Not-Repet it ive
(pulse w idth limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
30
0.1
300
14.6 A
850 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
OFF
Symbol Parameter Te st Cond itions Min. Typ. Max. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
500 V
Breakdown Volt age
I
DSS
I
GSS
Zer o Gat e V o lt age
Drain Current ( V
GS
Gat e-body Leak a ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125
V
DS
o
C
= ± 30 V
V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Te st Cond itions Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
345V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID= 7.5 A 0.33 0.36 Ω
Resistance
I
D(on)
On S tate Drain Curr e nt VDS>I
D(on)xRDS(on)max
14.6 A
VGS=10V
DYNAMIC
Symbol Parameter Te st Cond itions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconduc tanc e
C
C
C
Input Ca pacitan ce
iss
Out put C apa c itanc e
oss
Reverse Trans fer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=7.5A 8 12 S
VDS=25V f=1MHz VGS= 0 2600
330
40
3400
430
55
µA
µA
Ω
pF
pF
pF
2/9
STW15NB50- STH15NB50FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Te st Cond itions Min. Typ. Max. Unit
t
d(on)
Turn-on Time
r
Rise Time
t
VDD=250V ID=7.5A
=4.7 Ω VGS=10V
R
G
24
14
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Sou rc e Cha rge
gs
Gate-Drain Charge
gd
VDD=400V ID=15A VGS=10V 60
15
27
SWITCHINGOFF
Symbol Parameter Te st Cond itions Min. Typ. Max. Unit
t
r(Voff)
t
t
Of f - voltag e Rise Time
Fall Time
f
Cross-ov er T ime
c
VDD=400V ID=15A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
15
25
35
SOURCE DRAIN DIODE
Symbol Parameter Te st Cond itions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Source-drain Curre nt
(•)
Source-drain Curre nt
(pulsed)
(∗) Forwar d O n Voltage ISD=15A VGS=0 1.6 V
Reverse Rec ov er y
rr
Time
Reverse Rec ov er y
rr
= 15 A di/dt = 10 0 A/µs
I
SD
=100V Tj=150oC
V
DD
(see test circuit, figure 5)
680
9
Charge
Reverse Rec ov er y
26
Current
34
20
80 nC
20
33
47
14.6
58.4
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Areafor TO-247 Safe Operating Area for ISOWATT218
3/9
STW15NB50- STH15NB50FI
ThermalImpedance for TO-247
OutputCharacteristics
ThermalImpedance for ISOWATT218
TransferCharacteristics
Transconductance
4/9
StaticDrain-sourceOn Resistance
STW15NB50- STH15NB50FI
GateCharge vs Gate-sourceVoltage
Normalized GateThresholdVoltage vs
Temperature
CapacitanceVariations
Normalized On Resistancevs Temperature
Source-drainDiode Forward Characteristics
5/9
STW15NB50- STH15NB50FI
Fig. 1: Unclamped InductiveLoad Test Circuit
Fig. 3: SwitchingTimes Test CircuitsFor
ResistiveLoad
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Chargetest Circuit
Fig. 5: Test Circuit For InductiveLoad Switching
And Diode RecoveryTimes
6/9
TO-247 MECHANICAL DATA
STW15NB50- STH15NB50FI
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
Dia 3.55 3.65 0.140 0.144
mm inch
P025P
7/9
STW15NB50- STH15NB50FI
ISOWATT218MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122
D1 1.88 2.08 0.074 0.081
E 0.75 1 0.029 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817
M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181
L3
N
E
A
D
C
L5
M
H
L2
L6
L1
D1
F
U
G
123
L4
P025C
8/9
STW15NB50- STH15NB50FI
Information furnished is believed tobe accurate andreliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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