SGS Thomson Microelectronics STW14NK50Z, STP14NK50Z, STP14NK50ZFP, STB14NK50Z Datasheet
STP14NK50Z, STP14NK50ZFP
STB14NK50Z, STB14NK50Z-1, STW14NK50Z
N-CHANNEL500V-0.34Ω-14ATO-220/FP/D2PAK/I2PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET
TYPE V
STP14NK50Z
STP14NK50ZFP
STB14NK50Z
STB14NK50Z-1
STW14NK50Z
■ TYPICAL R
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSICCAPACITANCES
■ VERY GOOD MANUFACTURING
500 V
500 V
500 V
500 V
500 V
(on) = 0.34 Ω
DS
DSS
R
DS(on)
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
I
D
14 A
14 A
14 A
14 A
14 A
Pw
150 W
35 W
150 W
150 W
150 W
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis taken to ensure a very good dv/dt capability for the
most demanding applicat ions. Such series complements S T full range of high voltage MOSFETs including revolutionary MDm es h™ products.
TO-220
1
2
TO-220FP
3
TO-247
3
2
1
I2PAK
D2PAK
INTERNAL SCHEMATIC DIAGRAM
3
2
1
3
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP14NK50Z P14NK50Z TO-220 TUBE
STP14NK50ZFP P14NK50ZFP TO-220FP TUBE
STB14NK50ZT4 B14NK50Z
STB14NK50Z-1
B14NK50Z
STW14NK50Z W14NK50Z TO-247 TUBE
2
PAK
D
2
I
PAK
TAPE & REEL
TUBE
1/14March 2003
STP14NK50Z, STP14N K 50ZFP, STB14NK 50Z, STB14NK50Z-1, STW14NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP14NK50Z
STB14NK50Z/-1
I
V
DM
P
V
DGR
V
I
I
TOT
DS
GS
D
D
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 48 48 (*) 48 A
Total Dissipation at TC= 25°C
14 14 (*) 14 A
7.6 7.6 (*) 7.6 A
150 35 150 W
Derating Factor 1.20 0.28 1.20 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
≤14A, di/dt ≤200A/µs, VDD≤ V
(1) I
SD
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
STP14NK50ZFP STW14NK50Z
500 V
500 V
-55 to 150 °C
THERMAL DATA
TO-220
2
PAK
I
Rthj-case Thermal Resistance Junction-case Max 0.83 3.6 0.83 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max (#) 60 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
2
D
TO-220FP TO-247
PAK
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=50V)
j
12 A
400 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the 30V Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These in tegrated Zener diodes thus avoid
the usage of external components.
2/14
STP14NK50Z, STP14N K 50ZFP, STB14NK50 Z, STB14NK50Z-1, STW14NK50Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SP ECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 1mA, VGS= 0 500 V
Breakdown Voltage
I
I
GSS
V
GS(th)
R
DS(on)
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 100 µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 6 A 0.34 0.38 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=8V,ID=6A 12 S
g
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
=25V,f=1MHz,VGS= 0 2000
V
DS
238
55
VGS=0V,VDS= 0V to 400V 150 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=250V,ID=6A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
=400V,ID=12A,
V
DD
V
=10V
GS
24
16
69
12
31
92
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD= 250 V, ID=6A
R
=4.7ΩVGS=10V
G
54
12
(Resistive Load see, Figure 3)
t
r(Voff)
t
f
t
c
Fall Time
Cross-over Time
Off-voltage Rise Time
= 400V, ID=12A,
V
DD
RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)
9.5
9
20
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD=12A,VGS=0
I
SD
VDD=35V,Tj= 150°C
(see test circuit, Figure 5)
= 12 A, di/dt = 100A/µs
470
3.1
13.2
when VDSincreases from 0 to 80%
oss
12
48
1.6 V
ns
ns
ns
ns
ns
A
A
ns
µC
A
3/14
STP14NK50Z, STP14N K 50ZFP, STB14NK 50Z, STB14NK50Z-1, STW14NK50Z
Safe Operating Area For TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220FP
4/14
Thermal Impedance For TO-247Safe Operating Area For TO-247
STP14NK50Z, STP14N K 50ZFP, STB14NK50 Z, STB14NK50Z-1, STW14NK50Z
Output Characteristics
Transconductance
Transfer Characteristics
Static Drain-source O n Resistance
Gate Charge vs Gate-so urce Voltage Capacitance Variations
5/14
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