SGS Thomson Microelectronics STW13NB60 Datasheet
STW13NB60
STH13NB60FI
N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218
PowerMESH MOSFET
TYPE V
STW13 NB60
STH13NB60FI
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DS(on)
DSS
600 V
600 V
= 0.48
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
R
<0.54 Ω
<0.54
Ω
DS(on)
Ω
I
D
13 A
8.6 A
3
2
1
TO-247 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
1
3
2
APPLICATIONS
■ HIGHCURRENT, HIGHSPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES(SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW13NB60 STH 13N B60FP
V
V
V
I
DM
P
dv/ dt(
V
T
(•)Pulse width limited by safe operating area (1)I
Drain-source Voltage (VGS=0) 600 V
DS
Dra in- gat e Voltage (RGS=20kΩ)
DGR
Gate -sourc e Voltage ± 30 V
GS
Drain Current (continuous) at Tc=25oC138.6A
I
D
Drain Current (continuous) at Tc=100oC8.25.4A
I
D
600 V
(•) Drain Current (pulsed) 52 52 A
Total Dissipation at Tc=25oC 190 80 W
tot
Der at in g Fac to r 1.52 0.64 W/
1) P eak Dio de Recove ry voltage slope 4 4 V/ns
Insulat ion Withst and Voltage (DC) 2000 V
ISO
St orage Temperat ur e -65 to 1 50
stg
Max. Op er a t ing J unctio n Tem pe r at u r e 150
T
j
≤
13A,di/dt≤200
SD
Α/µ
s, V
≤
DD
V
(BR)DSS
,Tj≤T
JMAX
o
C
o
C
o
C
January 2000
1/9
STW13NB60 STH13NB60FI
THERMAL DATA
TO-247 ISOWATT218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max Val ue Uni t
I
AR
E
Ther mal Resis t an ce Junc ti on-cas e Max 0.66 1.56
Ther mal Resis t an ce Junc ti on-ambien t M a x
Thermal Resistance Case-sink Typ
Maximum Lead Temper at u r e Fo r Solder ing P ur p ose
l
Avalanche Cu rr ent, Repet it iv e or Not-Repetit iv e
(pulse width limite d by T
Single Pulse Ava lanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
30
0.1
300
13 A
700 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
600 V
Break d own Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain C u rr ent (V
GS
Gat e- b ody Le ak a ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125oC
V
DS
=± 30 V
V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250µA
345V
Voltage
R
DS(on)
Static Drain-source O n
VGS=10V ID= 6 .5 A 0.48 0.54 Ω
Resistanc e
I
D(on)
On State Drain Cu rr ent VDS>I
D(on)xRDS(on)max
13 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconduc tance
C
C
C
Input Capacit ance
iss
Out put Capacita nc e
oss
Reverse Tran sfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=6.5A 8 12 S
VDS=25V f=1MHz VGS= 0 2600
325
30
µ
µA
pF
pF
pF
A
2/9
STW13NB60 STH13NB60FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
t
d(on)
Q
Q
Q
Turn-on delay Time
t
Rise Time
r
Total Gate Charge
g
Gat e- Source Cha r ge
gs
Gate-Drain Charg e
gd
VDD= 300 V ID=2.5A
R
=4.7
G
Ω
VGS=10V
VDD= 480 V ID=13A VGS=10V 58
27
13
82 nC
15.5
23
SWITCHINGOFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off -voltage Rise Time
Fall Time
f
Cross-ov er T i m e
c
VDD= 480V ID=13A
=4.7 ΩVGS=10V
R
G
15
15
25
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
Source-drain Curr ent
(•)
Source-drain Curr ent
13
52
(pulsed)
(∗) For ward On Voltage ISD=13 A VGS=0 1.6 V
Reverse Reco v ery
rr
Time
Reverse Reco v ery
rr
= 13 A di/dt = 100 A/µs
I
SD
= 100 V Tj=150oC
V
DD
630
6.8
Charge
Reverse Reco v ery
22
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area for TO-247 SafeOperating Area for ISOWATT218
3/9
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