SGS Thomson Microelectronics STW10NK60Z, STP10NK60Z, STP10NK60ZFP, STB10NK60Z-1, STB10NK60Z Datasheet
STP10NK60Z/FP, STB10NK60Z/-1
STW10NK60Z
N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D2PAK/I2PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET
TYPE V
STP10NK60Z
STP10NK60ZFP
STB10NK60Z
STB10NK60Z-1
STW10NK60Z
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
600 V
600 V
600 V
600 V
600 V
(on) = 0.65 Ω
DS
DSS
R
DS(on)
< 0.75 Ω
< 0.75 Ω
< 0.75 Ω
< 0.75 Ω
< 0.75 Ω
I
D
10 A
10 A
10 A
10 A
10 A
Pw
115 W
35 W
115 W
115 W
156 W
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerME SH™ layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs i ncluding revolutionary MDmesh™ products.
TO-220
D2PAK
3
1
1
I2PAK
2
TO-220FP
3
TO-247
INTERNAL SCHEMATIC DIAGRAM
3
2
1
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP10NK60Z P10NK60Z TO-220 TUBE
STP10NK60ZFP P10NK60ZFP TO-220FP TUBE
STB10NK60ZT4 B10NK60Z
STB10NK60Z-1
B10NK60Z
STW10NK60Z W10NK60Z TO-247 TUBE
2
PAK
D
2
I
PAK
TAPE & REEL
TUBE
1/14July 2003
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, ST B10NK60Z -1, S TW10NK 60Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
TO-220/
2
PAK/I2PAK
D
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ) 600 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C 10 10 (*) 10 A
Drain Current (continuous) at TC= 100°C 5.7 5.7 (*) 5.7 A
()
Drain Current (pulsed) 36 36 (*) 36 A
Total Dissipation at TC= 25°C
115 35 156 W
I
V
DM
P
V
DGR
V
I
I
TOT
DS
GS
D
D
Derating Factor 0.92 0.28 1.25 W/°C
V
ESD(G-S)
Gate source ESD
(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
(1) I
≤10A, di/dt ≤200A/µs,VDD≤ V
SD
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
- 2500 - V
THERMAL DATA
TO-220
2
PAK
I
Rthj-case Thermal Resistance Junction-case Max 1.09 3.6 0.8 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max
(Whenmountedon minimum Footprint)
Rthj-amb Thermal Resistance Junction-ambient
Max
T
l
Maximum Lead Temperature For
Soldering Purpose
2
PAK
D
60 °C/W
TO-220FP TO-247
600 V
4000 V
-55 to 150 °C
(*)Limited only by maximumtemperatureallowed
TO-220FP TO-247 Unit
62.5 50 °C/W
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
E
AS
E
AR
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=50V)
j
Repetitive Avalanche Energy
(Pulse with limited by T
max)
j
max.)
j
9A
300 mJ
3.5 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIOD ES
The built-in back -to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb pos sible voltage trans ients that may occas ionally be
applied from gate to source. In this respect the Zener v olt age is appropriate to achieve an efficient and
cost-effective intervention toprotectthedevice’sintegrity.These integrated Zener diodes thus avoid
the usage of external components.
2/14
STP10NK60Z-STP10NK60ZFP, STB10N K60 Z, STB10N K60Z-1, ST W 10N K60Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SP ECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=1mA,VGS= 0 600 V
Breakdown Voltage
I
I
GSS
V
GS(th)
R
DS(on)
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 100µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 4.5 A 0.65 0.75 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID= 4.5 A 7.8 S
g
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
=25V,f=1MHz,VGS= 0 1370
V
DS
156
37
VGS=0V,VDS= 0V to 480V 90 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=300V,ID=4A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
=480V,ID=8A,
V
DD
V
=10V
GS
20
20
50
10
25
70
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD= 300 V, ID=4A
R
=4.7ΩVGS=10V
G
55
30
(Resistive Load see, Figure 3)
t
r(Voff)
t
f
t
c
Fall Time
Cross-over Time
Off-voltage Rise Time
= 480V, ID=8A,
V
DD
RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)
18
18
36
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD=10A,VGS=0
I
SD
VDD=40V,Tj= 150°C
(see test circuit, Figure 5)
= 8 A, di/dt = 100A/µs
570
4.3
15
when VDSincreases from 0 to 80%
oss
10
36
1.6 V
ns
ns
ns
ns
ns
A
A
ns
µC
A
3/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, ST B10NK60Z -1, S TW10NK 60Z
Safe Opera ting Area For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220/D2PAK/ I2PAK
Thermal Im pedance For TO-220FPSafe Operating Area For TO-220FP
4/14
Thermal Im pedance For TO-247Safe Operating Area For TO-247
STP10NK60Z-STP10NK60ZFP, STB10N K60 Z, STB10N K60Z-1, ST W 10N K60Z
Output Characteristics
Transconductance Static Drain-source On Resistance
Transfer Characteri stic s
Capacitance VariationsGate Charge vs Gate-source Voltage
5/14
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