SGS Thomson Microelectronics STW10NC70Z Datasheet
STW10NC70Z
N-CHANNEL 700V - 0.58 Ω - 10.6A TO-247
Zener-Protected PowerMESH™III MOSFET
TYPE V
DSS
STW10NC70Z 700 V < 0.75
■ TYPICAL R
■ EXTREMELY HIGH dv /d t CAPABILITY GATE-
(on) = 0.58 Ω
DS
R
DS(on)
I
D
Ω
10.6 A
TO-SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPAC ITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH O VERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
I
GS
V
ESD(G-S)
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
T
stg
T
j
(•)Pu l se width limi te d by safe oper ating area
≤10.6A, di/dt ≤100A/µs, VDD ≤ V
(1)I
SD
(*)Limit ed only by maxi mum temperature allow ed
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
700 V
700 V
Gate- source Voltage ±25 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 42 A
Total Dissipation at TC = 25°C
10.6 A
6.7 A
190 W
Derating Factor 1.51 W/°C
Gate-source Current (*) ±50 mA
Gate source ESD(HBM-C=100pF, R=15K
Ω)
4KV
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
, Tj ≤ T
(BR)DSS
JMAX.
1/8Sep 2000
STW10NC70Z
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 0.66 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
∆
BV
DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Breakdown Voltage Temp.
/∆T
J
Coefficient
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
= 25 °C, ID = IAR, VDD = 50 V)
j
I
I
V
= 0)
DS
GS
= 0)
V
V
= 250 µA, VGS = 0
D
= 1 mA, VGS = 0
D
= Max Rating
DS
= Max Rating, TC = 125 °C
DS
= ±20V
GS
700 V
10.6 A
380 mJ
0.8 V/°C
1µA
50 µA
±10 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
= VGS, ID = 250 µA
DS
= 10 V, ID = 5.3 A
V
GS
V
> I
D(on)
=10V
x R
DS
V
GS
DS(on)max,
345V
0.58 0.75
10.6 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
> I
V
g
(1)
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance 250 pF
Reverse Transfer
Capacitance
I
D
V
DS
=5.3A
DS
x R
D(on)
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
13 S
3550 pF
30 pF
Ω
2/8
STW10NC70Z
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON (RESISTIVE LOAD)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 12 ns
Total Gate Charge
Gate-Source Charge 19 nC
Gate-Drain Charge 24 nC
SWITCHING OFF (INDUCTIVE LOAD)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 36 ns
Cross-over Time 77 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Source-drain Current 10.6 A
(2)
Source-drain Current (pulsed) 42 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 8.7 µC
Reverse Recovery Current 26 A
= 350V, ID = 5.3A
DD
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
V
= 560V, ID = 10.6 A,
DD
VGS = 10V
VDD = 560V, ID = 10.6 A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
ISD = 10.6 A, VGS = 0
ISD = 10.6 A, di/dt = 100A/µs,
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
36 ns
72 100 nC
36 ns
1.6 V
660 ns
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
α
T Voltage Thermal Coefficient T=25°C Note(3) 1.3
Rz Dynamic Resistance
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating area.
3. ∆
Gate-Source Breakdown
Voltage
= αT (25°-T) BV
V
BV
GSO
(25°)
Igs=± 1mA (Open Drain) 25 V
10
I
= 50 mA
GS
90
-4
/°C
Ω
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specif ically been designed to enhanc e not only t he dev ice’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrat ed Z ener diodes thus avoi d t he
usage of external components.
3/8
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