SGS Thomson Microelectronics STW10NC60 Datasheet
STW10NC60
STH10NC60FI
N - CHANNEL 600V - 0.65Ω - 10A - TO-247/ISOWATT218
PowerMESH ΙΙ MOSFET
PRELIMINARY DATA
TYPE V
ST W 10NC 60
ST H10NC 60FI
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DS(on)
DSS
600 V
600 V
= 0.65 Ω
DESCRIPTION
The PowerMESH ΙΙ is the evolution of the first
generation of MESH OVERLAY. The layout
refinements introduced greatly improve the
Ron*areafigure of meritwhile keeping the device
at the leading edge for what concerns switching
speed,gate chargeand ruggedness.
APPLICATIONS
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
■ HIGHCURRENT, HIGHSPEEDSWITCHING
R
DS(on)
<0.75Ω
<0.75Ω
I
D
10 A
10 A
3
2
1
TO-247 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
2
1
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW10NC60 ST H10NC 60FI
V
V
V
I
DM
P
dv/dt(
V
T
(•) Pulse width limited by safe operating area (1)ISD≤ 10 A, di/dt ≤ 200 A/µs, VDD≤ V
(*) Limited only by maximum temperature allowed
November 1999
Drain-source Voltage (VGS= 0) 600 V
DS
Drain- gate Volt age (RGS=20kΩ) 600 V
DGR
Gate-source Voltage ± 30 V
GS
Drain Cur rent ( cont inu ous ) at Tc=25oC 10 10(*) A
I
D
Drain Cur rent ( cont inu ous ) at Tc= 100oC6.23.8A
I
D
(•) Drain Current (pulsed) 40 40 A
Tota l Dissipat i on at Tc=25oC 160 60 W
tot
Derat ing Factor 1.28 0.48 W/
1) Peak Diode Recove r y volt age slop e 3 V/ns
Insulation Withstand Voltage (DC) _ 4000 V
ISO
Stor age Temperat ure -65 to 150
stg
Max. Operat ing Junction T emperature 150
T
j
(BR)DSS
,Tj≤T
JMAX
o
C
o
C
o
C
1/6
STW10NC60/STH10NC60FI
THERMAL DATA
TO-247 ISOWATT 218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max 0.78 2.08
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead T e m pe ra t ure For Soldering P urpose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanc he Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
30
0.1
300
10 A
850 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 600 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=100oC
V
DS
V
=± 30 V
GS
1
50
100 nA
±
ON(∗)
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250µA 234V
Sta t ic Drain-s our c e On
VGS=10V ID=4.5 A 0.65 0.75
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
10 A
VGS=10V
DYNAMIC
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=4.5A 3 6.5 S
VDS=25V f=1MHz VGS= 0 1480
210
25
µA
µA
Ω
pF
pF
pF
2/6
STW10NC60/STH10NC60FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
Turn-on Time
Rise Time
r
Tot al Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD=300V ID= 4.5 A
R
=4.7
G
Ω
VGS=10V
VDD= 480 V ID=9 A
=10V
V
GS
28
14
40
10.5
17.5
56 nC
SWITCHING OFF
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Ris e Time
Fall T ime
f
Cross-over Tim e
c
VDD=480V ID=9A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
14
12
23
SOURCEDRAINDIODE
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration= 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operatingarea
Source-drain Current
(•)
Source-drain Current
10
40
(pulsed)
(∗)ForwardOnVoltage ISD=10A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD=9A di/dt=100A/µs
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
600
5.4
Charge
Reverse Recovery
18
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
3/6
Loading...