STW10NC60
STH10NC60FI
N - CHANNEL 600V - 0.65Ω - 10A - TO-247/ISOWATT218
PowerMESH ΙΙ MOSFET
PRELIMINARY DATA
TYPE V
ST W 10NC 60
ST H10NC 60FI
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DS(on)
DSS
600 V
600 V
= 0.65 Ω
DESCRIPTION
The PowerMESH ΙΙ is the evolution of the first
generation of MESH OVERLAY. The layout
refinements introduced greatly improve the
Ron*areafigure of meritwhile keeping the device
at the leading edge for what concerns switching
speed,gate chargeand ruggedness.
APPLICATIONS
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
■ HIGHCURRENT, HIGHSPEEDSWITCHING
R
DS(on)
<0.75Ω
<0.75Ω
I
D
10 A
10 A
3
2
1
TO-247 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
2
1
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW10NC60 ST H10NC 60FI
V
V
V
I
DM
P
dv/dt(
V
T
(•) Pulse width limited by safe operating area (1)ISD≤ 10 A, di/dt ≤ 200 A/µs, VDD≤ V
(*) Limited only by maximum temperature allowed
November 1999
Drain-source Voltage (VGS= 0) 600 V
DS
Drain- gate Volt age (RGS=20kΩ) 600 V
DGR
Gate-source Voltage ± 30 V
GS
Drain Cur rent ( cont inu ous ) at Tc=25oC 10 10(*) A
I
D
Drain Cur rent ( cont inu ous ) at Tc= 100oC6.23.8A
I
D
(•) Drain Current (pulsed) 40 40 A
Tota l Dissipat i on at Tc=25oC 160 60 W
tot
Derat ing Factor 1.28 0.48 W/
1) Peak Diode Recove r y volt age slop e 3 V/ns
Insulation Withstand Voltage (DC) _ 4000 V
ISO
Stor age Temperat ure -65 to 150
stg
Max. Operat ing Junction T emperature 150
T
j
(BR)DSS
,Tj≤T
JMAX
o
C
o
C
o
C
1/6
STW10NC60/STH10NC60FI
THERMAL DATA
TO-247 ISOWATT 218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max 0.78 2.08
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead T e m pe ra t ure For Soldering P urpose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanc he Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
30
0.1
300
10 A
850 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 600 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=100oC
V
DS
V
=± 30 V
GS
1
50
100 nA
±
ON(∗)
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250µA 234V
Sta t ic Drain-s our c e On
VGS=10V ID=4.5 A 0.65 0.75
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
10 A
VGS=10V
DYNAMIC
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=4.5A 3 6.5 S
VDS=25V f=1MHz VGS= 0 1480
210
25
µA
µA
Ω
pF
pF
pF
2/6
STW10NC60/STH10NC60FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
Turn-on Time
Rise Time
r
Tot al Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD=300V ID= 4.5 A
R
=4.7
G
Ω
VGS=10V
VDD= 480 V ID=9 A
=10V
V
GS
28
14
40
10.5
17.5
56 nC
SWITCHING OFF
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Ris e Time
Fall T ime
f
Cross-over Tim e
c
VDD=480V ID=9A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
14
12
23
SOURCEDRAINDIODE
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration= 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operatingarea
Source-drain Current
(•)
Source-drain Current
10
40
(pulsed)
(∗)ForwardOnVoltage ISD=10A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD=9A di/dt=100A/µs
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
600
5.4
Charge
Reverse Recovery
18
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
3/6
STW10NC60/STH10NC60FI
Fig. 1:
UnclampedInductiveLoad TestCircuit
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2:
UnclampedInductive Waveform
Fig. 4: Gate Chargetest Circuit
Fig. 5:
Test CircuitFor InductiveLoad Switching
And Diode Recovery Times
4/6
TO-247 MECHANICAL DATA
STW10NC60/STH10NC60FI
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
mm inch
P025P
5/6
STW10NC60/STH10NC60FI
ISOWATT218MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122
D1 1.88 2.08 0.074 0.081
E 0.75 1 0.029 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817
M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181
L3
N
E
A
C
L2
D
D1
6/6
L5
M
H
L6
F
U
G
123
L1
L4
P025C
STW10NC60/STH10NC60FI
Information furnishedis believedto be accurateand reliable.However, STMicroelectronics assumes no responsibilityfor the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights ofSTMicroelectronics. Specification mentioned in this publicationare
subjectto change without notice.Thispublicationsupersedes and replacesall informationpreviouslysupplied.STMicroelectronicsproducts
are not authorized for use as critical components in life support devicesor systemswithout express written approval of STMicroelectronics.
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