SGS Thomson Microelectronics STVD901J Datasheet
®
FEATURES AND BENEFITS
High capacitance ratio
n
Tuned for 900 Mhz band in mobile phone
n
Surface mount device
n
DESCRIPTION
The STDV901J is a variable capacitance diode in
SOD-323 package. This diode is intended to be
used in mobile phone application to control the
VCO frequency.
SOD-323
STVD901J
VARICAP
47
A
K
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
I
T
stg
T
T
Continuous reverse voltage 6 V
R
Continuous forward current 20 mA
F
Storage temperature range - 65 to +150 °C
Maximum junction temperature 150 °C
j
Maximum temperature for soldering 260 °C
L
January 2003 - Ed: 2
1/4
STVD901J
STATIC ELECTRICAL CHARACTERISTICS (Tj = 25°C otherwise specified)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
Continuous reverse current VR=6V 10 nA
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j-a)
Junction to ambient 500 °C/W
ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
C
t
r
f
L
s
Cd (0.25 V)
Diode capacitance VR= 0.25 V f = 1 MHz 3.6 4 4.4 pF
Diode series resistance VR= 1V f = 100 MHz 0.5 Ohm
Series inductance 1.5 nH
Capacitance ratio f = 1 MHz 2
/ Cd (2.7 V)
Fig. 1: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 2: Relative variation of reverse leakage current versus junction temperature (typical values).
I (µA)
R
1.E+01
Tj=125°C
1.E+00
1.E-01
1.E-02
V (V)
1.E-03
0.0 2.0 4.0 6.0 8.0 10.0
R
Tj=100°C
Tj=75°C
Tj=25°C
2/4
I [T ] / I [T =25°C)
Rj Rj
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
V =6V
R
T (°C)
j
25 50 75 100 125
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