SGS Thomson Microelectronics STV80NE03L-06 Datasheet
STV80NE03L-06
N - CHANNEL 30V - 0.005Ω - 80A - PowerSO-10
STripFET MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST V80NE03L-06 30 V < 0.006 Ω 80 A
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE 100
■ APPLICATIONORIENTED
DS(on)
= 0.005 Ω
o
C
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDAND RELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-ACCONVERTERS
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc. )
10
1
PowerSO-10
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/ dt Peak Diode Recovery voltage slope 7 V/ ns
T
(•) Pulsewidth limitedby safeoperating area (1)ISD≤ 80 A, di/dt ≤ 300 A/µs, VDD≤ V
May 2000
Dra in- sour c e Volt age (VGS=0) 30 V
DS
Dra in- gat e Voltage (RGS=20kΩ)30V
DGR
Gat e-source Volt age ± 20 V
GS
I
Dra in Cu rr ent ( c ont inuous) at Tc=25oC80A
D
I
Dra in Cu rr ent ( c ont inuous) at Tc=100oC60A
D
(•) Drain Cu rr ent ( p ulsed) 320 A
Tot al Diss ipation at Tc=25oC 150 W
tot
Derating Factor 1 W/
St orage T emperatur e -65 to 175
stg
T
Max. Operating Junction Temperat ur e 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STV80NE03L-06
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead Tem pe ra t ure F or So ldering Purpos e
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanche E nergy
AS
(starting T
=25oC, ID=IAR,VDD=15V)
j
max,δ <1%)
j
1
62.5
0.5
300
80 A
600 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
- 40 to150oC unless otherwisespecified)
(T
J=
OFF
Symbol Parameter Test Condit ions Min. Typ. Max. U nit
V
(BR)DSS
I
DSS
I
GSS
Drain-source
Break dow n Vo lt age
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
ID=250µAVGS=0
=250µAVGS=0 Tc=25oC
I
D
V
=MaxRating Tc=25oC
DS
=0)
=MaxRating
V
DS
= ± 20 V ± 100 nA
V
GS
27
30
1
50
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. U nit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µ A
V
DS=VGSID
Sta t ic Drain-s our c e On
Resistance
VGS=10V ID=40A
=5V ID=40A
V
GS
V
=10V ID=40A TJ=25oC
GS
=5V ID=40A TJ=25oC
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)max
= 250 µ ATJ=25oC
0.6
1.7
3.0
2.5
0.012
0.018
0.005
0.006
0.009
40 A
VGS=10V
DYNAMIC
V
µA
µ
V
Ω
Ω
Ω
Ω
A
Symbol Parameter Test Condit ions Min. Typ. Max. U nit
g
(∗)Forward
fs
VDS>I
D(on)xRDS(on)maxID
=40 A 20 S
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
VDS=25V f=1MHz VGS= 0 6500
1500
500
8700
2000
700
Capacit a nc e
2/8
pF
pF
pF
STV80NE03L-06
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Condit ions Min. Typ. Max. U nit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=15V ID=40A
R
G
=4.7
Ω
VGS=5V
40
26055350
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD=24V ID=80A VGS=5V 95
30
44
130 nC
SWITCHING OFF
Symbol Parameter Test Condit ions Min. Typ. Max. U nit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall T ime
f
Cross-over Tim e
c
VDD=24V ID=80A
=4.7 Ω VGS=5V
R
G
(see test circuit, figure 5)
70
165
250
95
220
340
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. Max. U nit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
80
320
(pulsed)
(∗)ForwardOnVoltage ISD=80A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 80 A di/dt = 10 0 A/µs
=15V Tj= 150oC
V
DD
(see test circuit, figure 5)
75
0.14
Charge
Reverse Recovery
4
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area for ThermalImpedance
3/8
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