SGS Thomson Microelectronics STV7801S Datasheet

STV7801S

PLASMA DATA POWER SWITCH

PRELIMINARY DATA

FEATURES

■ High Voltage - Low Power Pulse Generator

■ 100V Absolute Maximu m Supply

■ High Load Drive Capability (25nF)

■ 5V Compatible Input Logic

■ Very Low Stand-by Current

■ Power Recovery High Current (±7A)

■ Totem Pole High Output Current (±5A)

■ Built-in Timing Control & Thermal Protection

■ BCD Technology

■ Packaging: Multiwatt 15, Power SO20

DESCRIPTION

STV7801 is a m onolithic integrated circuit implemented in STMicroelectronics BCD proprietary technology designed as a switched power supply generator for data drivers in a Plasma Display Panel (P.D.P.) application.

The high load drive capabil ity of the STV7 801 reduces the number of devices necessary to drive a complete PDP (4 to 6 devices for a 42” VGA 16/9 PDP monitor).

The STV7801 high current drive capability provides a high power recovery efficiency coefficient superior to 85% on constant capacitive load.

To limit the numbe r of external components, the device integrates level shifters driven with 5V CMOS compatible levels.

To increase the reliability of the system, the device integrates several protections such as output over-voltage, over-temperature, power-ON protection.

MULTIWATT 15 (Plastic Package)

ORDER CODE: STV7801S

Customer samples will be available

by september 2000

POWERSO20 (Plast ic Package)

20 leads

ORDER CODE: STV7801SP

Revision 3.3

June 2000 1/18

This is preliminary information on a new product in development or undergoing evaluation. Details are subject to change without notice.

STV7801S

1 - PIN CONNE CT ION

Multiwatt 15

PowerSO20

15 14 13 12 11 10

Vpp Vpp

CBoot Out

Vssp

Vdd 9 8 7 6 5 4 3 2 1

DM-LH

Vsslog

DM-HL

PR-FPS

LH-Tr

L-Clmp

H-Clmp

HL-Tr

2/18

Vsssub

HL-Tr

H-Clmp

L-Clmp

LH-Tr PR-FPS PR-FPS

DM-HL

Vsssub

1 2 3 4

5 6 7 8 9

20 19 18 17

14 13 12

Vsssub Vpp Vpp

CBoot Out

Vssp Vssp

Vdd DM-LH

Vsslog

2 - BLOC DIAGRAM

MULTIWATT 15

Vdd

Protection

Control

Voltage Control

CBoot Vpp

13 15 14

Bootstrap

control

STV7801S

H-Clmp

LH-Tr

HL-Tr

L-Clmp

Vsslog

STV7801S

Timing Control

LH Transistor

HL Transistor

DM-HLPR-FPS

DM-LH

H-Clmp Transistor

L-Clmp Transistor

11965

Vssp

Out

3/18

STV7801S

3 - PIN DESCRIPTION

Multiwatt 15

Pin Number Pin Name Function Description

1 HL-Tr Input Power Recovery High Level/Low Level Transition 2 H-Clmp Input Main Switch High-Side Clamp Input 3 L-Clmp Input Main Switch Low-Side Clamp Input 4 LH-Tr Input Power Recovery Low Level/High Level Transition 5 PR-FPS Input Power Recovery Floating Supply 6 DM-HL Input Current Recirculation- Input Pin - High/Low Transition 7 PR Output Power Recirculation Output Stage 8 Vsslog Ground Logic Ground/Substrate Ground

9 DM-LH Output Current Recirculation- Output Pin - Low/High Transition 10 Vdd Supply Logic Supply 11 Vssp Ground Power Ground 12 Out Output Main Switch Output 13 CBoot Input Bootstrap Capacitor Input Pin 14 Vpp Supply High Voltage Supply 15 Vpp Supply High Voltage Supply

PowerSO20

Pin Number Pin Name Function Description

1 Vssub Ground Substrate Ground

2 HL-Tr Input Power Recovery High Level/Low Level Transition

3 H-Clmp Input Main Switch High-Side Clamp Input

4 L-Clmp Input Main Switch Low-Side Clamp Input

5 LH-Tr Input Power Recovery Low Level/High Level Transition

6 PR-FPS Input Power Recovery Floating Supply

7 PR-FPS Input Power Recovery Floating Supply

DM-HL

9 PR Output Power Recirculation Output Stage 10 11

Vssub

Vsslog

12 DM-LH Output Current Recirculation- Output Pin - Low/High Transition 13 14 15

Vdd Vssp Vssp

16 Out Output Main Switch Output 17 CBoot Input Bootstrap Capacitor Input Pin

Input Current Recirculation- Input Pin - High/Low Transition

Ground Substrate Ground Ground Logic Ground/Substrate Ground

Supply Logic Supply Ground Power Ground Ground Power Ground

4/18

Pin Number Pin Name Function Description

18 Vpp Supply High Voltage Supply 19 Vpp Supply High Voltage Supply 20 Vssub Ground Substrate Ground

4 - CIRCUIT DESCRIPTION

STV7801S

STV7801 is a monol ithic integrated circuit implemented in ST Microelectronics BCD proprietary technology designed as a switched power supp ly generator for data drivers in a Plasma Display Panel (P.D.P.) application.

The high load drive capability of STV7801 reduces the number of devices n ecessary to drive a com plete PDP (4 to 6 devices for a 42" VGA 16/9 PDP monitor).

STV7801 high current drive capability provides a high power recovery efficiency coefficient superior to 85% on constant capacitive load. The structure of the output stage is implemented with 2 DMOS transistors to minimise the die size. External components like bootstrap capacitor can also be implemented to increase the performances of the circuit.

STV7801 integrates level s hifters driven with 5V CMOS compatible levels. This feature reduces the number of discrete components such as voltage trans lator s.

STV7801 integrates several protections like output over-voltage, timing control and over-tem perature to increase the reliability of the system.

Over-voltage protection consists in clamping diodes connected between Vpp, Vssp and critical nodes of the devices.

Timing control consists in a m onitoring of the ou tput stage control signals to avoid any cross-conduction.

Over-temperature protection is activated when junction temperature reaches the threshold values fixed internally and sets the device in tri-state mode.

STV7801 can drive several data drivers connected to column electrodes of the panel. The maximum amount of data drivers is given by the Power Recovery Current of the device and then the maximum rise/fall time of the signal. The rise and fall time of the AC supply signal is adjusted by the value of the inductance connected to the panel capacitance through the data drivers. The amount of STV7801 needed to gene rate the AC supply can be reduced by increasing the rise/fall time of the generated AC supply.

5 - CONTROL SIGN ALS TR UTH TABLE

HL-Tr LH-Tr L-Clmp H-Clmp Device Output Comments

L H L L Low to High Transition Power Saving Mode

H L L L High to Low Transition Power Saving Mode

LXLH XLHL X X H H Tri-State Protection Mode XHHXTri-State Protection Mode H X X H Tri-State Protection Mode

L L L L Tri-State Protection Mode

Vpp Power Supply Clamp Vssp Power Ground Clamp

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STV7801S

6 - POWER ON SEQUENCE

If Vpp is switched ON before Vdd, the circuit remains in Tri-State mode until Vdd reaches Vdd threshold. If Vddis switched ON before Vpp, the circuit remains in Tri-State mode until Vpp reaches Vpp threshold.

7 - ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

Vdd Logic Supply Range -0.3,+14 V

Vpp Driver Supply Range -0.3 , + 100 V

VIn Logic Input Voltage Range -0.3, Vdd+0.3 °C

Ih-Out Main Switch High Side Current -5 A

Il-Out Main Switch Low Side Current 5 A Ipr-Hi Power Recovery Current (note1)-7A

Ipr-Lo Power Recovery current (note1)7A

CBoot-Vout

Tjmax Maximum Junction Temperature (note2)

Top Operating Temperature Range -20, +70 °C Tstg Storage Temperature Range -50, +150 °C

Difference between Boot voltage and output voltage 14 V

Internally

protected

°C

Note 1 Peak current as defined in Figure 1 on page 9 Note 2 T hese parame ters are meas ured during ST ’s internal qua lification whi ch includes tem perature ch aracterizat ion

on standard and corner batches of the process. These parameters are not tested on the parts.

Remark: ESD susceptibility

Human body Model: 100pF, 1.5kΩ

Vpp pin (14-15: Multiwatt 15) V DM-LH pin (9: Multiwatt 15) V

By connecting a 1nF decoupling capacitor, the circuit withstands V

ESD

= 200V

=400V

=2.2kV on all pins.

ESD

8 - THERMAL DAT A

Symbol Parameter

th(j-a)

th(j-c)

Note 3 Multilayer PCB. Note 4 Package floating in the air.

Junction - Ambient Thermal Resistance 40(note3) 35 (note4)°C/W Junction - Case Thermal Resistance +0.6, +2.5 -0.6, +2.4

PowerSO20 MW15

Value

Unit

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