SGS Thomson Microelectronics STV7801S Datasheet

STV7801S

PLASMA DATA POWER SWITCH

PRELIMINARY DATA

FEATURES

■ High Voltage - Low Power Pulse Generator

■ 100V Absolute Maximu m Supply

■ High Load Drive Capability (25nF)

■ 5V Compatible Input Logic

■ Very Low Stand-by Current

■ Power Recovery High Current (±7A)

■ Totem Pole High Output Current (±5A)

■ Built-in Timing Control & Thermal Protection

■ BCD Technology

■ Packaging: Multiwatt 15, Power SO20

DESCRIPTION

STV7801 is a m onolithic integrated circuit imple­mented in STMicroelectronics BCD proprietary
technology designed as a switched power supply
generator for data drivers in a Plasma Display
Panel (P.D.P.) application.

The high load drive capabil ity of the STV7 801 re­duces the number of devices necessary to drive a
complete PDP (4 to 6 devices for a 42” VGA 16/9
PDP monitor).

The STV7801 high current drive capability pro­vides a high power recovery efficiency coefficient
superior to 85% on constant capacitive load.

To limit the numbe r of external components, the
device integrates level shifters driven with 5V
CMOS compatible levels.

To increase the reliability of the system, the device
integrates several protections such as output
over-voltage, over-temperature, power-ON pro­tection.

.

MULTIWATT 15 (Plastic Package)

ORDER CODE: STV7801S

Customer samples will be available

by september 2000

POWERSO20 (Plast ic Package)

20 leads

ORDER CODE: STV7801SP

Revision 3.3

June 2000 1/18

This is preliminary information on a new product in development or undergoing evaluation. Details are subject to change without notice.

1

STV7801S

1 - PIN CONNE CT ION

Multiwatt 15

PowerSO20

15
14
13
12
11
10

Vpp
Vpp

CBoot
Out

Vssp

Vdd
9
8
7
6
5
4
3
2
1

DM-LH

Vsslog

PR

DM-HL

PR-FPS

LH-Tr

L-Clmp

H-Clmp

HL-Tr

2/18

Vsssub

HL-Tr

H-Clmp

L-Clmp

LH-Tr
PR-FPS
PR-FPS

DM-HL

PR

Vsssub

1
2
3
4

5
6
7
8
9

10

20
19
18
17

16

15

14
13
12

11

Vsssub
Vpp
Vpp

CBoot
Out

Vssp
Vssp

Vdd
DM-LH

Vsslog

2

2 - BLOC DIAGRAM

MULTIWATT 15

Vdd

10

Protection

Control

Voltage Control

CBoot Vpp

13 15 14

Bootstrap

control

STV7801S

H-Clmp

LH-Tr

HL-Tr

L-Clmp

Vsslog

2

4

1

3

8

STV7801S

Timing
Control

LH Transistor

HL Transistor

DM-HLPR-FPS

DM-LH

H-Clmp
Transistor

L-Clmp
Transistor

11965

Vssp

7

12

PR

Out

3/18

STV7801S

3 - PIN DESCRIPTION

Multiwatt 15

Pin Number Pin Name Function Description

1 HL-Tr Input Power Recovery High Level/Low Level Transition
2 H-Clmp Input Main Switch High-Side Clamp Input
3 L-Clmp Input Main Switch Low-Side Clamp Input
4 LH-Tr Input Power Recovery Low Level/High Level Transition
5 PR-FPS Input Power Recovery Floating Supply
6 DM-HL Input Current Recirculation- Input Pin - High/Low Transition
7 PR Output Power Recirculation Output Stage
8 Vsslog Ground Logic Ground/Substrate Ground

9 DM-LH Output Current Recirculation- Output Pin - Low/High Transition
10 Vdd Supply Logic Supply
11 Vssp Ground Power Ground
12 Out Output Main Switch Output
13 CBoot Input Bootstrap Capacitor Input Pin
14 Vpp Supply High Voltage Supply
15 Vpp Supply High Voltage Supply

PowerSO20

Pin Number Pin Name Function Description

1 Vssub Ground Substrate Ground

2 HL-Tr Input Power Recovery High Level/Low Level Transition

3 H-Clmp Input Main Switch High-Side Clamp Input

4 L-Clmp Input Main Switch Low-Side Clamp Input

5 LH-Tr Input Power Recovery Low Level/High Level Transition

6 PR-FPS Input Power Recovery Floating Supply

7 PR-FPS Input Power Recovery Floating Supply

8

DM-HL

9 PR Output Power Recirculation Output Stage
10
11

Vssub

Vsslog

12 DM-LH Output Current Recirculation- Output Pin - Low/High Transition
13
14
15

Vdd
Vssp
Vssp

16 Out Output Main Switch Output
17 CBoot Input Bootstrap Capacitor Input Pin

Input Current Recirculation- Input Pin - High/Low Transition

Ground Substrate Ground
Ground Logic Ground/Substrate Ground

Supply Logic Supply
Ground Power Ground
Ground Power Ground

4/18

Pin Number Pin Name Function Description

18 Vpp Supply High Voltage Supply
19 Vpp Supply High Voltage Supply
20 Vssub Ground Substrate Ground

4 - CIRCUIT DESCRIPTION

STV7801S

STV7801 is a monol ithic integrated circuit imple­mented in ST Microelectronics BCD proprietary
technology designed as a switched power supp ly
generator for data drivers in a Plasma Display
Panel (P.D.P.) application.

The high load drive capability of STV7801 reduces
the number of devices n ecessary to drive a com ­plete PDP (4 to 6 devices for a 42" VGA 16/9 PDP
monitor).

STV7801 high current drive capability provides a
high power recovery efficiency coefficient superior
to 85% on constant capacitive load. The structure
of the output stage is implemented with 2 DMOS
transistors to minimise the die size. External com­ponents like bootstrap capacitor can also be im­plemented to increase the performances of the cir­cuit.

STV7801 integrates level s hifters driven with 5V
CMOS compatible levels. This feature reduces the
number of discrete components such as voltage
trans lator s.

STV7801 integrates several protections like output
over-voltage, timing control and over-tem perature
to increase the reliability of the system.

Over-voltage protection consists in clamping di­odes connected between Vpp, Vssp and critical
nodes of the devices.

Timing control consists in a m onitoring of the ou t­put stage control signals to avoid any cross-con­duction.

Over-temperature protection is activated when
junction temperature reaches the threshold values
fixed internally and sets the device in tri-state
mode.

STV7801 can drive several data drivers connected
to column electrodes of the panel. The maximum
amount of data drivers is given by the Power Re­covery Current of the device and then the maxi­mum rise/fall time of the signal. The rise and fall
time of the AC supply signal is adjusted by the val­ue of the inductance connected to the panel ca­pacitance through the data drivers. The amount of
STV7801 needed to gene rate the AC supply can
be reduced by increasing the rise/fall time of the
generated AC supply.

5 - CONTROL SIGN ALS TR UTH TABLE

HL-Tr LH-Tr L-Clmp H-Clmp Device Output Comments

L H L L Low to High Transition Power Saving Mode

H L L L High to Low Transition Power Saving Mode

LXLH
XLHL
X X H H Tri-State Protection Mode
XHHXTri-State Protection Mode
H X X H Tri-State Protection Mode

L L L L Tri-State Protection Mode

Vpp Power Supply Clamp
Vssp Power Ground Clamp

5/18

STV7801S

6 - POWER ON SEQUENCE

If Vpp is switched ON before Vdd, the circuit remains in Tri-State mode until Vdd reaches Vdd threshold.
If Vddis switched ON before Vpp, the circuit remains in Tri-State mode until Vpp reaches Vpp threshold.

7 - ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

Vdd Logic Supply Range -0.3,+14 V

Vpp Driver Supply Range -0.3 , + 100 V

VIn Logic Input Voltage Range -0.3, Vdd+0.3 °C

Ih-Out Main Switch High Side Current -5 A

Il-Out Main Switch Low Side Current 5 A
Ipr-Hi Power Recovery Current (note1)-7A

Ipr-Lo Power Recovery current (note1)7A

V

CBoot-Vout

Tjmax Maximum Junction Temperature (note2)

Top Operating Temperature Range -20, +70 °C
Tstg Storage Temperature Range -50, +150 °C

Difference between Boot voltage and output voltage 14 V

Internally

protected

°C

Note 1 Peak current as defined in Figure 1 on page 9
Note 2 T hese parame ters are meas ured during ST ’s internal qua lification whi ch includes tem perature ch aracterizat ion

on standard and corner batches of the process. These parameters are not tested on the parts.

Remark: ESD susceptibility

Human body Model: 100pF, 1.5kΩ

Vpp pin (14-15: Multiwatt 15) V
DM-LH pin (9: Multiwatt 15) V

By connecting a 1nF decoupling capacitor, the circuit withstands V

ESD

ESD

= 200V

=400V

=2.2kV on all pins.

ESD

8 - THERMAL DAT A

Symbol Parameter

R

th(j-a)

R

th(j-c)

Note 3 Multilayer PCB.
Note 4 Package floating in the air.

Junction - Ambient Thermal Resistance 40(note3) 35 (note4)°C/W
Junction - Case Thermal Resistance +0.6, +2.5 -0.6, +2.4

PowerSO20 MW15

Value

Unit

6/18