SGS Thomson Microelectronics STV60NE06-16 Datasheet
N - CHANNEL 60V - 0.013Ω - 60A PowerSO-10
TYPE V
DSS
ST V60NE06-16 60 V < 0. 016 Ω 60 A
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE 100
■ APPLICATIONORIENTED
DS(on)
= 0.013 Ω
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
o
R
C
DS(on)
I
D
STV60NE06-16
STripFET POWER MOSFET
PRELIMINARY DATA
10
1
PowerSO-10
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGHCURRENT, HIGHSPEED SWITCHING
■ SOLENOIDAND RELAY DRIVERS
■ MOTORCONTROL, AUDIO AMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc. )
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/ dt Peak Diode Re c ov er y v olt age slope 6 V/ns
T
(•) Pulse width limited by safeoperating area (1)ISD≤60 A, di/dt ≤ 300 A/µs, VDD≤ V
May 2000
Dra in- sour c e Voltage (VGS=0) 60 V
DS
Dra in- gate Volt age (RGS=20kΩ)60V
DGR
Gat e-source V oltage ± 20 V
GS
I
Dra in Current (c ont inuous) a t Tc=25oC60A
D
I
Dra in Current (c ont inuous) a t Tc=100oC42A
D
(•) Dra in Current (p ulsed) 240 A
Tot al Dissipat ion at Tc=25oC 150 W
tot
Derating Factor 1 W/
St orage Tempe r ature -65 t o 175
stg
T
Max. O perating Junction Temperat ur e 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/6
STV60NE06-16
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Te mperature For Solder ing Purp os e
l
Avalanche Current, R epetitive or Not-Repetitive
(pulse width limited by T
Single P ul s e Avalanc he Energy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max,δ <1%)
j
1
62.5
0.5
300
60 A
350 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
- 40 to 150oC unless otherwise specified)
(T
J=
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 60 V
Break dow n Volt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Cur rent (V
GS
Gat e- bod y L eakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA 234V
Sta t ic Drain -s ource On
VGS=10V ID= 40 A 0.013 0.016
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
60 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capac i t ance
iss
Out put Capacitanc e
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=30 A 20 35 S
VDS=25V f=1MHz VGS= 0 4600
580
140
µ
µA
Ω
pF
pF
pF
A
2/6
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