SGS Thomson Microelectronics STV40NE03L-20 Datasheet
STV40NE03L-20
N - CHANNEL 30V - 0.014Ω - 40A - PowerSO-10
STripFET MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST V40NE03L-20 30 V < 0.020 Ω 40 A
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE A 100
■ APPLICATIONORIENTED
DS(on)
= 0.014 Ω
o
C
CHARACTERIZATION
DESCRIPTION
This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-ACCONVERTERSIN HIGH
PERFORMANCE VRMs
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
10
1
PowerSO-10
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
dv/ dt (
T
(•) Pulse width limited by safe operating area (1)ISD≤ 40 A, di/dt ≤300 A/µs, VDD≤ V
May 2000
Drain-source Voltage (VGS=0) 30 V
DS
Drain- g at e V olt age (RGS=20kΩ)30V
DGR
Gate-source Voltage
GS
I
Drain Cur rent (c ont in uous ) at Tc=25oC40A
D
I
Drain Cur rent (c ont in uous ) at Tc=100oC28A
D
20 V
±
(•) Drain Current (pulsed) 160 A
Total Dissipation at Tc=25oC80W
tot
Derat ing F ac tor 0.53 W/
1 ) Peak Diode Recovery voltage slope 7 V / ns
Sto rage Temperatur e -65 to 175
stg
T
Max. Operating J unction Temper at ur e 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STV40NE03L-20
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temperatu r e For Soldering Purpose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanche Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=15V)
j
max,δ <1%)
j
1.88
62.5
0.5
300
40 A
200 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= -40to 150oC unlessotherwisespecified)
(T
J
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain-source
Break dow n Vo lt age
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
ID=250µAVGS=0 Tc=25oC
=250µAVGS=0
I
D
V
=MaxRating Tc=25oC
=0)
DS
=MaxRating
V
DS
= ± 20 V ± 100 nA
V
GS
30
27
1
50
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µ ATc=25oC
V
DS=VGSID
Sta t ic Drain-s our c e On
Resistance
VGS=10V ID=20A Tc=25oC
=5V ID=20A Tc=25oC
V
GS
V
=10V ID=20A
GS
=5V ID=20A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on )max
= 250 µ A
1
0.6
1.8 2.5
3.0
0.014 0. 0 2
0.023
0.04
0.046
20 A
VGS=10V
DYNAMIC
V
µA
µ
V
V
Ω
Ω
Ω
Ω
A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
VDS>I
D(on)xRDS(on )maxID
=20A 10 S
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
VDS=25V f=1MHz VGS= 0 1850
450
160
2400
590
210
Capacit a nc e
2/8
pF
pF
pF
STV40NE03L-20
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Time
Rise Time
t
r
Tot al Gate Charge
g
Gat e- Source Char g e
gs
Gate-Drain Charge
gd
VDD=15V ID=20A
R
G
=4.7
Ω
VGS=5V
25
16033210
VDD=24V ID=40A VGS=5V 29
12
14
38 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-volt age Rise Time
Fall T ime
f
Cross-over Tim e
c
VDD=24V ID=40A
R
G
=4.7
Ω
VGS=5V
25
120
155
33
160
210
SOURCEDRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
40
160
(pulsed)
(∗)ForwardOnVoltage ISD=40A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 40 A di/dt = 100 A/µs
=20V Tj= 150oC
V
DD
50
0.9
Charge
Reverse Recovery
3.5
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area ThermalImpedance
3/8
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