SGS Thomson Microelectronics STV160NF02L Datasheet



STV160NF02L

N - CHANNEL 20V - 0.0016Ω - 160A - PowerSO-10

STripFET MOSFET

TYPE V

DSS

R

DS(on)

I

D

ST V160NF02L 20 V < 0.0025 Ω 160 A

■ TYPICALR

■ ULTRA LOW ON-RESISTANCE

■ ULTRA FAST SWITCHING

■ 100%AVALANCHETESTED

■ VERYLOW GATE CHARGE

■ LOW THRESHOLDDRIVE

■ LOW PROFILE, VERY LOWPARASITIC

DS(on)

= 0.0016 Ω

INDUCTANCE PowerSO-10PACKAGE

DESCRIPTION

The STV160NF02L represents the second generation of Application Specific STMicroelectronics well established STripFET process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switchingapplicationwhere efficiency is crucial.

10

1

PowerSO-10

INTERNAL SCHEMATIC DIAGRAM

CONNECTIONDIAGRAM (TOP VIEW)

APPLICATIONS

■ BUCK CONVERTERSIN HIGH

PERFORMACETELECOMAND VRMs DC-DC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

V

I

D

I

DM

P

T

(•) Pulse width limited by safe operating area (**) Limited only maximumjunction temperature allowed by PowerSO-10

June 1999

Drain-source Voltage (VGS=0) 20 V

DS

Drain- gate Voltage (RGS=20kΩ)20V

DGR

Gate - source V o lt age

GS

20 V

±

(**) Drain Current (cont inu ous) at Tc=25oC 160 A

I

Drain Current (cont inu ous) at Tc=100oC 113 A

D

(•) Drain Current (pulsed) 640 A

Tota l Dissipati on at Tc=25oC 160 W

tot

Derat ing F ac t or 1.07 W/ Stor age Tem perature -65 to 175

stg

Max. Operating Junct ion Tem perature 175

T

j

o

C

o

C

o

C

1/8

STV160NF02L

THERMAL DATA

R

thj-case

R

thj-amb

T

Ther mal Resistance J unction- cas e Max Ther mal Resistance J unction- ambient Max Maximum Lead Temperatu re F or So lder ing Purpos e

l

0.9375 50

300

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unlessotherwisespecified)

(T

J

OFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 20 V

Break dow n Volt age

I

DSS

I

GSS

Zero Gate Voltage Drain Cur rent ( V

GS

Gat e- bod y L eak ag e Current (V

DS

=0)

V

=MaxRating

DS

=MaxRating Tc=25oC

V

DS

V

=± 15 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µATc=25oC11.72.5V Sta t ic Drain -s ource On

Resistance

VGS=10V ID=80A

=8V ID=80A

V

GS

V

=4.5V ID=40A

GS

=10V ID=80A Tj=175oC

V

GS

V

=8V ID=80A Tj=175oC

GS

=4.5V ID=40A Tj= 175oC

V

GS

On State Drain Current VDS>I

D(on)xRDS(on )max

1.6

1.7

3.5

160 A

2.5

3.5 6

5.7 7

11.4

VGS=10V

µA µA

m mΩ m mΩ m mΩ

Ω Ω Ω

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. U nit

gfs(∗)Forward

Tr ansc on duc tance

R

C

Gate re sistance VDS=15V f=1MHz VGS=0 0.9 Ω

g

Input Capac i t ance

iss

Out put Capacitanc e

oss

Reverse Tr ansfer

rss

Capacit a nc e

C

Input Capac i t ance

iss

Out put Capacitanc e

oss

Reverse Tr ansfer

rss

Capacit a nc e

2/8

VDS>I

D(on)xRDS(on )maxID

= 80 A 210 S

VDS=15V f=1MHz VGS= 0 4900

2950

565

VDS=0V f=1MHz VGS= 0 7200

13000

4220

pF pF pF

STV160NF02L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. U nit

t

d(on)

Tur n-on Delay Time Rise Ti m e

t

r

VDD=15V ID=40A R

=4.7

G

Ω

VGS=10V

23

350

(Resis t iv e Loa d, see fig. 3)

Q Q Q

Tot al Gat e Charge

g

Gat e- Source Charg e

gs

Gate-Drain Charge

gd

VDD=16V ID= 160 A VGS= 10 V 103

38

9

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. U nit

t

d(off)

Tur n-of f D ela y Time

t

Fall T ime

f

VDD=15V ID=40A R

G

=4.7

Ω

VGS=10V

105 120

(Resis t iv e Loa d, see fig. 3)

t

d(off)

t

r(Voff)

t

Tur n-of f D ela y Time Off-volt ag e Rise T ime Fall T ime

f

Cross-over T im e

c

V

=16V ID=80A

clamp

R

=4.7

G

Ω

VGS=10V

(Indu ct iv e Load , see f ig . 5)

85

46 335 404

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. U nit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration= 300 µs, duty cycle 1.5% (•) Pulse width limited by safe operating area

Source-drain Current

(•)

Source-drain Current

160 640

(pulsed)

(∗)ForwardOnVoltage ISD= 160 A VGS=0 1.5 V

Reverse Recovery

rr

Time Reverse Recovery

rr

ISD= 80 A di/dt = 10 0 A/µs

=15V

V

DD

(see test circuit, fig. 5)

100

0.25 Charge Reverse Recovery

5

Current

ns ns

nC nC nC

ns ns

ns ns ns ns

A A

ns

µ

A

C

SafeOperating Area ThermalImpedance

3/8