SGS Thomson Microelectronics STU8NC90ZI, STU8NC90Z Datasheet

1/10Sep 2000

STU8NC90Z

STU8NC90ZI

N-CHANNEL 900V - 1.1Ω - 7.6A Max220/I-Max220

Zener-Protected PowerMESH™III MOSFET

■ TYPICAL R

DS

(on) = 1.1Ω

■ EXTREMELY HIGH dv /d t C APABILITY

■ GATE-TO-SOURCE ZENER DIODES

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPAC ITANCES

■ GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH O VERLAY™ Power
MOSFETs for very high voltage exhibits unsur­passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil­ity with higher ruggedness performance as request­ed by a large variety of single-switch applications.

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pu l se width limi te d by safe oper ating area

TYPE V

DSS

R

DS(on)

I

D

STU8NC90Z
STU9NC90Z I

900 V
900 V

< 1.38

Ω

< 1.38

Ω

7 A
7 A

Symbol Parameter Value Unit

STU8NC90Z STU8NC90ZI

V

DS

Drain-source Voltage (VGS = 0)

900 V

V

DGR

Drain-gate Voltage (RGS = 20 kΩ)

900 V

V

GS

Gate- source Voltage ±25 V

I

D

Drain Current (continuos) at TC = 25°C

7 7(*) A

I

D

Drain Current (continuos) at TC = 100°C

4.4 4.4(*) A

I

DM

(1)

Drain Current (pulsed) 28 28(*) A

P

TOT

Total Dissipation at TC = 25°C

160 55 W

Derating Factor 1.28 0.44 W/°C

I

GS

Gate-source Current ±50 mA

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=15K

Ω)

4KV

dv/dt(

●) Peak Diode Recovery voltage slope 3 V/ns

V

ISO

Insulation Winthstand Voltage (DC) -- 2000 V

T

stg

Storage Temperature –65 to 150 °C

T

j

Max. Operating Junction Temperature 150 °C

(1)ISD ≤ 7A, di/dt ≤100A/µs, VDD ≤ V

(BR)DSS

, Tj ≤ T

JMAX

(*)Limit ed only by maxi mum temperature allow ed

Max220

I-Max220

1

2

3

STU8NC90Z/STU8NC90ZI

2/10

THERMA L D ATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON

(1)

DYNAMIC

Max220 I-Max220

Rthj-case Thermal Resistance Junction-case Max 0.78 2.27 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 300 °C

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

j

max)

7A

E

AS

Single Pulse Avalanche Energy
(starting T

j

= 25 °C, ID = IAR, VDD = 50 V)

430 mJ

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

ID = 250 µA, VGS = 0 900 V

∆

BV

DSS

/∆TJBreakdown Voltage Temp.

Coefficient

ID = 1 mA, VGS = 0 1

V/°C

I

DSS

Zero Gate Voltage
Drain Current (V

GS

= 0)

V

DS

= Max Rating

1µA

V

DS

= Max Rating, TC = 125 °C

50 µA

I

GSS

Gate-body Leakage
Current (V

DS

= 0)

V

GS

= ±20V

±10 µA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage

V

DS

= VGS, ID = 250µA

345V

R

DS(on)

Static Drain-source On
Resistance

VGS = 10V, ID = 3.8A

1.1 1.38

Ω

I

D(on)

On State Drain Current VDS > I

D(on)

x R

DS(on)max,

V

GS

=10V

7A

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

Forward Transconductance VDS > I

D(on)

x R

DS(on)max,

I

D

= 3.8A

9S

C

iss

Input Capacitance

V

DS

= 25V, f = 1 MHz, VGS = 0

3550 pF

C

oss

Output Capacitance 205 pF

C

rss

Reverse Transfer
Capacitance

25 pF

3/10

STU8NC90Z/STU8NC90ZI

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON (RESISTIVE LOAD)

SWITCHING OFF (INDUCTIVE LOAD)

SOURCE DRAIN DIODE

GATE-SOURCE ZENER DIODE

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.

2. Pulse width li mited by safe operating area.

3. ∆

V

BV

= αT (25°-T) BV

GSO

(25°)

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specif ically been designed to enhanc e not only t he dev ice’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrat ed Z ener diodes thus avoi d t he
usage of external components.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on Delay Time

V

DD

= 400V, ID = 4A
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)

36 ns

t

r

Rise Time 12 ns

Q

g

Total Gate Charge

V

DD

= 720V, ID = 8 A,
VGS = 10V

73 102 nC

Q

gs

Gate-Source Charge 18 nC

Q

gd

Gate-Drain Charge 27 nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

Off-voltage Rise Time

V

DD

= 720V, ID = 8 A,

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 5)

36 ns

t

f

Fall Time 45 ns

t

c

Cross-over Time 77 ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

Source-drain Current 7 A

I

SDM

(2)

Source-drain Current (pulsed) 28 A

VSD (1)

Forward On Voltage

ISD = 7 A, VGS = 0

1.6 V

t

rr

Reverse Recovery Time

I

SD

= 8 A, di/dt = 100A/µs,
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)

860 ns

Q

rr

Reverse Recovery Charge 10 µC

I

RRM

Reverse Recovery Current 24 A

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown
Voltage

Igs=± 1mA (Open Drain) 25 V

α

T Voltage Thermal Coefficient T=25°C Note(3) 1.3

10

-4

/°C

Rz Dynamic Resistance

I

GS

= 50 mA, VGS = 0

90

Ω