SGS Thomson Microelectronics STU7NB90I Datasheet
STU7NB90
STU7NB90I
N-CHANNEL 900V - 1.1 Ω - 7.3 A Max220/Max220I
PowerMesh™ MOSFET
TYPE V
DSS
STU7NB90 900 V < 1.45
STU7NB90I 900 V < 1.45
■ TYPICAL R
■ EXTREMELY HIGH dv /d t CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPAC ITANCES
■ GATE CHARGE MINIMIZED
■ REDUCED VOLTAGE SPREAD
(on) = 1.1 Ω
DS
R
DS(on)
I
D
Ω
7.3 A
Ω
7.3 A
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termination structure, gives the lowest R
DS(on)
per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLI ES ( SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT
3
2
1
Max220
Max220I
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STU7NB90 STU7NB90I
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns
V
ISO
T
stg
T
j
(•)Pu l se width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
900 V
900 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 29.2 29.2 (*) A
Total Dissipation at TC = 25°C
7.3 7.3 (*) A
4.6 4.6 (*) A
170 60 W
Derating Factor 1.36 0.47 W/°C
Insulation Withstand Voltage (DC) - 2500 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1) ISD ≤7.3 A, di/dt ≤200A/µs, VDD ≤ V
(*) Curren t Lim i ted by Pack age
(BR)DSS
, Tj ≤ T
JMAX.
1/9May 2001
STU7NB90 - STU7NB90I
THERMA L D ATA
Max220 Max220 I
Rthj-case Thermal Resistance Junction-case Max 0.734 2.1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 900 V
7.3 A
600 mJ
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±30V ±100 nA
GS
1µA
50 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250 µA
DS
VGS = 10 V, ID = 4 A
234V
1.1 1.45
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 225 pF
Reverse Transfer
Capacitance
ID=4 A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
8S
2120 pF
23 pF
Ω
2/9
STU7NB90 - STU7NB90I
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 12 ns
Total Gate Charge
Gate-Source Charge 12.5 nC
Gate-Drain Charge 23.5 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 15 ns
Cross-over Time 31 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating ar ea.
Source-drain Current 7.3 A
(2)
Source-drain Current (pulsed) 29.2 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 6.3 µC
Reverse Recovery Current 18 A
= 450 V, ID = 3.5 A
DD
RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
V
= 720V, ID = 7.4A,
DD
VGS = 10V
V
= 720V, ID = 7.4 A,
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
ISD = 7.3 A, VGS = 0
I
= 7.4 A, di/dt = 100A/µs,
SD
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
25 ns
51 72 nC
22 ns
1.6 V
700 ns
Safe Operating Area for Max220ISafe Operating Area for Max220
3/9
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