SGS Thomson Microelectronics STU7NA90 Datasheet
®
N - CHANNEL 900V - 1.05 Ω - 7A - Max220
FAST POWER MOS TRANSISTOR
TYPE V
DSS
STU7NA90 900 V < 1.3 Ω 7 A
■ TYPICAL R
■ ± 30V GATE TO SO URCE VO LT AG E
DS(on)
= 1.05 Ω
RANTING
■ 100% AVALANCHE TESTE D
■ REPETITIVE AV A LANCHE DATA AT 100
■ LOW INTRINSIC CAPACITANCE
■ GATE CHARGE MINIMIZED
■ REDUCED VOLTAG E SP REA D
R
DS(on)
STU7NA90
PRELIMINARY DATA
I
D
o
C
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED S WITCHI NG
■ SWITCH MODE PO WE R S UPP LY (S MPS )
■ CONSUMER AND I NDUS TRIA L LI G HTING
■ DC-AC CONVERT E R FOR W E LDI NG
Max220
EQUIPMENT AND UN INTERRUPTABLE
POWER SUPP LY (UPS)
INTERNAL SCHEMAT I C DIAGRAM
ABSOLUTE MA XIMU M RAT INGS
Symbol Parameter Value Unit
V
V
V
IDM(•) Drain Current (pulsed) 28 A
P
T
(•) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0) 900 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC7A
D
I
Drain Current (continuous) at Tc = 100 oC 4.41 A
D
Total Dissipation at Tc = 25 oC 160 W
tot
Derating Factor 1.28 W/
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
900 V
o
C
o
C
o
C
June 1998
1/5
STU7NA90
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTI CS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max, δ < 1%)
j
DD
= 25 V)
0.78
30
0.1
300
7A
700 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
900 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 100oC
DS
V
= ± 30 V
GS
50
500
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS ID = 250 µA
V
DS
VGS = 10 V ID = 3 A 1.05 1.3 Ω
2.25 3 3.75 V
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
7A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 3.5 A 7 9 S
= 0 3100
GS
310
100
4000
400
130
µA
µA
pF
pF
pF
2/5
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