SGS Thomson Microelectronics STU7NA80 Datasheet
STU7NA80
N - CHANNEL 800V - 1.3Ω - 6.5A - Max220
FAST POWER MOSFET
PRELIMINARY DATA
■ TYPICAL R
DS(on)
= 1.3 Ω
■ ± 30V GATE TO SOURCE VOLTA G E RATING
■ REPETITIVE AVA LANCHE TES TED DATA
AT 100
o
C
■ LOW INTRINSIC CAPACITANCE
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VO LTA GE SPREA D
DESCRIPTION
The Max220
TM
package is a new high volume
power package exibiting the same footprint as the
industry standard TO-220, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages. The increased die
capacity makes the device ideal to reduce
component count in multiple paralleled TO-220
designs and save board space with respect to
larger packages.
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SWITC H MODE POWER SUPPLIES (SMPS)
■ CONSUMER AND INDU STRI AL LIG HT ING
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SU PP LIE S (UPS)
®
INTER NAL SCH E M ATI C DIAG RA M
TYPE V
DSS
R
DS(on)
I
D
STU7NA80 800 V < 1.5 Ω 6.5 A
June 1998
1
2
3
Max220
TM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS = 0) 800 V
V
DGR
Drain- gate Voltage (RGS = 20 kΩ)
800 V
V
GS
Gate-source Voltage ± 30 V
I
D
Drain Current (continuous) at Tc = 25 oC 6.5 A
I
D
Drain Current (continuous) at Tc = 100 oC 4.3 A
I
DM
(•) Drain Current (pulsed) 26 A
P
tot
Total Dissipation at Tc = 25 oC 145 W
Derating Factor 1.16 W/
o
C
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
(•) Pulse width limited by safe operating area
1/5
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-si n k
T
I
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
0.86
30
0.1
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
ma x)
6.5 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 oC, ID = IAR, V
DD
= 50 V)
220 mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA V
GS
= 0
800 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8 Tc = 100 oC
250
1000µAµA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 30 V
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
Voltage
V
DS
= VGS ID = 250 µA
2.25 3 3.75 V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10 V ID = 3.5 A 1.3 1.5 Ω
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max
V
GS
= 10 V
6.5 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗) Forward
Transconductance
VDS > I
D(on)
x R
DS(on)max
ID = 3.5 A 4.5 7.2 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0 1770
190
50
2300
250
70
pF
pF
pF
STU7NA80
2/5
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