SGS Thomson Microelectronics STU16NB50 Datasheet
STU16NB50
N-CHANNEL 500V - 0.28Ω - 15.6A-Max220
PowerMESH MOSFET
TYPE V
DSS
R
DS(on)
I
D
STU16NB50 500 V < 0.33 Ω 15.6 A
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
■ ± 30VGATETO SOURCEVOLTAGERATING
DS(on)
= 0.28 Ω
DESCRIPTION
Using the latesthigh voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ SWITCHMODE POWER SUPPLIES(SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
3
2
1
Max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/ dt(
T
(•) Pulsewidth limited by safe operating area (1)ISD≤16A, di/dt ≤ 200 A/µs, VDD≤ V
September 1999
This is preliminaryinformation on a newproduct now in development or undergoing evaluation. Details are subject to change withoutnotice.
Drain-source Voltage (VGS=0) 500 V
DS
Dra in- gate Voltage (RGS=20kΩ)
DGR
Gate -sourc e Volta ge ± 30 V
GS
I
Drain C urrent (co ntinuous) at Tc=25oC15.6A
D
I
Drain C urrent (co ntinuous) at Tc=100oC9.8A
D
500 V
(•) Drain C urrent (pu lsed) 62 A
Total Dissipation at Tc=25oC160W
tot
Derating Factor 1.28 W/
1) P eak Diode Recovery volt age slope 4.5 V/ns
St orage T e m pe rature -65 t o 150
stg
T
Max. Opera t ing Junct io n T emper at u re 150
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/6
STU16NB50
THERMAL DATA
R
thj-case
Rthj-a mb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max Val ue Uni t
I
AR
E
Ther mal Resis t an ce Junc ti on-cas e Max
Ther mal Resis t an ce Junc ti on-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperat ure F or S old er ing Purpose
l
Avalanche Current , Repetit iv e or No t -Repet it ive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
0.78
62.5
0.5
300
15.6 A
850 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS= 0 @ 100oC
I
D
500 V
Break d own Volt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- b ody Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125oC
V
DS
= ± 30 V
V
GS
1
50
± 100 nA
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250 µA
345V
Voltage
R
DS(on)
Static Drain-source On
VGS=10V ID=7.8 A 0.28 0.33
Resistanc e
I
D(on)
On S t ate Dra in Current VDS>I
D(on)xRDS(on)max
15.6 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconduc tance
C
C
C
Input Capaci t an c e
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=7.8 A 9 S
VDS=25V f=1MHz VGS= 0 2850
400
42
3710
520
55
µA
µ
Ω
pF
pF
pF
A
2/6
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