SGS Thomson Microelectronics STU11NB60 Datasheet
®
STU11NB60
N-CHANNEL 600V - 0.5Ω - 11A - Max220
PowerMESH MOSFET
PRELIMINARY DATA
TYPE V
DSS
R
DS(on)
I
D
STU11NB60 600 V < 0.6 Ω 11 A
■
TYPICAL R
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED
■
30V GATE TO SOURCE VOLTAGE RATING
±
DS(on)
= 0.5
Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■
SWITCH MODE POWER SUPP LIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTI BLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
Max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1) ISD ≤11 A, di/dt ≤ 200 A/µs, VDD ≤ V
January 1999
This is preliminary inform ation on a new product now in developm ent or underg oin g evaluation. Details are subject to change without notice.
Drain-source Voltage (VGS = 0) 600 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC11A
D
I
Drain Current (continuous) at Tc = 100 oC7A
D
600 V
(•) Drain Current (pulsed) 44 A
Total Dissipation at Tc = 25 oC 160 W
tot
Derating Factor 1.28 W/
) Peak Diode Recovery voltage slope 4 V/ns
1
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
o
C
1/5
STU11NB60
THERMAL DATA
R
thj-case
Rthj-am b
R
thc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
DD
= 50 V)
0.78
62.5
0.5
300
11 A
700 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
I
= 250 µA V
D
GS
= 0
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 30 V
GS
600 V
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
345V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID =5.5 A 0.5 0.60 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
11 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID =5.5 A 6 8.5 S
= 0 2200
GS
300
30
µA
µA
pF
pF
pF
2/5
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