SGS Thomson Microelectronics STTH8R06R, STTH8R06FP, STTH8R06G, STTH8R06D Datasheet
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
(typ.) 5.5A
I
RM
Tj (max) 175 °C
(max) 1.8 V
V
F
trr (max) 45 ns
FEATURES AND BENEFITS
Ultrafast switching
■
■ Low reverserecovery current
■ Reduces switchinglosses
Low thermal resistance
■
DESCRIPTION
The STTH8R06D/FP/G/R,whichisusingST600V
technology, is specially suited as boost diode in
continuous mode power factor corrections and
hard switching conditions.
The device is also intended for use as a free
wheeling diode in powersuppliesand other power
switching applications.
8A
600 V
STTH8R06D/FP/G/R
K
A
K
TO-220AC
STTH8R06D
K
A
NC
D2PAK
STTH8R06G
TO-220FPAC
STTH8R06FP
K
2
PAK
I
STTH8R06R
NC
A
K
A
K
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage 600 V
RMS forward current 30 A
Average forward current δ = 0.5 TO-220AC Tc = 130°C
8A
D2PAK/I2PAK Tc = 130°C
TO-220FPAC Tc = 85°C
I
FSM
T
stg
Surge non repetitive forwardcurrent tp = 10 ms Sinusoidal 80 A
Storage temperature range - 65 + 175 °C
Tj Maximum operating junction temperature + 175 °C
January 2002 - Ed: 2C
1/7
STTH8R06D/FP/G/R
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case TO-220AC / D2PAK/I2PAK
TO-220FPAC
2.2
4.6
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
Reverse leakage
current
Forward voltage drop IF= 8 A Tj = 25°C 2.9 V
F
VR= 600V Tj = 25°C 30 µA
Tj = 125°C 35 400
Tj = 125°C 1.4 1.8
To evaluate the maximumconduction losses use thefollowing equation :
P=1.16xI
F(AV)
+ 0.08 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
trr I
= 0.5 A Irr= 0.25 A IR= 1A Tj = 25°C 25 ns
F
I
=1A dIF/dt=-50A/µsVR= 30V 45
F
I
RM
VR= 400 V IF=8A dIF/dt = - 200A/µs Tj = 125°C 5.5 7.2 A
S factor 0.3
Qrr 150 nC
tfr I
V
FP
=8A dIF/dt=64A/µs
F
VFR=1.1xVFmax
Tj = 25°C 150 ns
5V
2/7
STTH8R06D/FP/G/R
Fig.1: Conductionlossesversusaveragecurrent.
PF(av)(W)
22
20
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
18
16
14
δ = 1
12
10
8
6
T
4
2
0
012345678910
IF(av) (A)
δ
=tp/T
tp
Fig. 3-1: Relative variation of thermal impedance
junctiontocase versus pulse duration (TO-220AC,
2
PAK, D2PAK).
I
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
Fig. 2: Forward voltage drop versus forward
current.
IFM(A)
100
90
80
Tj=125°C
Maximum values
70
60
Tj=125°C
Typical values
50
40
30
Tj=25°C
Maximum values
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VFM(V)
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAC).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0
tp(s)
δ
=tp/T
T
tp
Fig. 4: Peak reverse recovery current versus
/dt (90% confidence).
dI
F
IRM(A)
22
VR=400V
20
Tj=125°C
18
16
14
12
10
8
6
4
2
0
0 200 400 600 800 1000
IF=0.25 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)
dIF/dt(A/µs)
IF=2 x IF(av)
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0 1E+1
tp(s)
δ
=tp/T
T
tp
Fig. 5: Reverse recovery time versus dIF/dt
(90% confidence).
trr(ns)
120
110
100
90
80
70
60
50
40
30
20
10
0
0 200 400 600 800 1000
IF=IF(av)
IF=0.5 x IF(av)
dIF/dt(A/µs)
VR=400V
Tj=125°C
IF=2 x IF(av)
3/7
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