SGS Thomson Microelectronics STTH8R03G, STTH8R03D Datasheet
®
STTH8R03G/D
300V HYPERFAST RECTIFIER
MAJOR PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
(typ.) 4A
I
RM
8A
300 V
Tj (max) 175 °C
(max) 1.3 V
V
F
trr (max) 30 ns
FEATURES AND BENEFITS
Designed for high frequency applications.
■
■ Hyperfast recovery competes with GaAs devices.
■ Allowssizedecreaseofsnubbers and heatsinks.
DESCRIPTION
The TURBOSWITCH "R" is an ultra high
performance diode.
This TURBOSWITCH family, which drastically
cuts losses in associated MOSFET when run at
high dIF/dt, is suited for HF OFF-Line SMPS and
DC/DC converters.
K
A
K
TO-220AC
STTH8R03D
K
A
NC
D2PAK
STTH8R03G
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
February 2001 - Ed: 1H
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 140°C δ = 0.5
Surge non repetitive forward current tp = 10 ms sinusoidal
Storage temperature range
Maximum operating junction temperature
300 V
20 A
8A
80 A
- 65 + 175 °C
+ 175 °C
1/6
STTH8R03G/D
THERMAL AND POWER DATA
Symbol Parameter Value Unit
R
th (j-c)
Junction to case
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
2.5 °C/W
*
I
R
Reverse leakage
V
R=VRRM
current
V
**
F
Forward voltage drop I
= 8 A Tj = 25°C
F
Tj = 25°C
Tj = 125°C
Tj = 125°C
15 100
1.05 1.3
10 µA
1.8 V
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.9xI
F(AV)
+ 0.05 I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
13 ns
30
4 5.5 A
I
trr
RM
= 0.5 A Irr= 0.25 A IR= 1A Tj = 25°C
I
F
I
=1A dIF/dt=-50A/µsVR= 30V
F
VR= 200 V IF=8A dIF/dt = - 200A/µs Tj = 125°C
S factor 0.4
TURN-ON SWITCHING CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
t
fr
Tj = 25°C IF=8A dIF/dt = 100A/µs
200 ns
measured at 1.1xVFmax
2/6
V
FP
Tj = 25°C IF=8A dIF/dt = 100A/µs
3.5 V
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