SGS Thomson Microelectronics STTH803G, STTH803D Datasheet
®
HIGH FREQUENCY SECONDARY RECTIFIER
MAJOR PRODUCTS CHAR ACTERISTICS
STTH803D/G
I
F(AV)
V
RRM
8 A
300 V
Tj (max) 175 °C
V
(max) 1 V
F
trr (max) 35 ns
FEATURES AND BENE FITS
COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
DESCRIPTION
Single Fast Recovery Epitaxial Diode suited for
Switch Mode Power Supply and high frequency
DC/DC converters.
2
Packaged in TO-220AC or D
PAK this device is
especially intended for secondary r ectification.
K
TO-220AC
STTH803D
K
A
D
N.C.
2
PAK
A
K
STTH803G
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RSM
T
stg
Tj
October 1999 - Ed: 5C
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 150°C δ = 0.5
Surge non repetitive forward current tp = 10 ms sinusoidal
Non repetitive avalanche current tp = 20 µs square
Storage temperature range
Maximum operating junction temperature
300 V
20 A
8A
100 A
4A
-65 +175 °C
+ 175 °C
1/6
STTH803D/G
THERMA L RE SISTA NC ES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case
STATIC ELECTRICAL CHARACTE RISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
2.5 °C/W
*
I
R
V
F
Reverse leakage
current
**
Forward voltage drop I
V
= 300 V Tj = 25°C
R
Tj = 125°C
= 8 A Tj = 25°C
F
IF = 8 A Tj = 125°C
20 200
0.85 1
20 µA
1.25 V
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x I
F(AV)
+ 0.031 I
F2(RMS )
RECOVERY CH ARACTE RIST ICS
Symbol Tests conditions Min. Typ. Max. Unit
25 ns
35
200 ns
3.5 V
8A
V
S
trr
tfr
FP
factor
I
RM
= 0.5 A Irr = 0.25 A IR = 1 A Tj = 25°C
I
F
I
= 1 A dIF/dt = - 50 A/µs VR = 30 V Tj = 25°C
F
I
= 8 A dIF/dt = 100 A/µs
F
V
= 1.1 x VF max.
FR
Vcc = 200V IF = 8 A
dI
/dt = 200 A/µs
F
Tj = 25 °C
Tj = 25 °C
Tj = 125°C
0.3 -
2/6
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