SGS Thomson Microelectronics STTH802CT, STTH802CFP, STTH802CB Datasheet

®

HIGH EFFICIENCY ULTRAFAST DIODE

MAIN PRODUCT CHARACTERISTICS

I

F(AV)

V

RRM

Tj (max) 175 °C

(max) 0.95 V

V

F

trr (max) 20 ns

2x4A

200 V

STTH802CT/CB/CFP

A1

K

A2

FEATURES AND BENEFITS

Suited for SMPS

■

Low losses

■

Low forward and reverserecovery times

■

High surge current capability

■

■ High junction temperature

■ Insulated package: TO-220FPAB

TO-220AB

STTH802CT

A1

A2

K

A1

K

TO-220FPAB

STTH802CFP

K

DESCRIPTION

Dual center tap rectifier suited for Switch Mode Power Supplies and High frequency DC to DC converters. Packaged in DPAK, TO-220AB or TO-220FPAB. This device is intended foruseinlow voltage, high frequency inverters, free wheeling and polarity

DPAK

STTH802CB

A1

A2

K

protection applications.

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage 200 V RMS forward current TO-220AB / TO-220FPAB /DPAK 10 A Average forward

current δ =0.5

TO-220AB / DPAK Tc = 155°C Per diode 4 A TO-220FPAB Tc = 145°C

A2

TO-220AB / DPAK Tc = 150°C Per device 8 A TO-220FPAB Tc = 130°C

I

FSM

T

stg

Surge non repetitive forwardcurrent tp = 10 ms Sinusoidal 50 A Storage temperature range - 65 + 175 °C

Tj Maximum operating junction temperature 175 °C

April 2002 - Ed: 1A

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STTH802/CT/CB/CFP

THERMAL PARAMETERS

Symbol Parameter Maximum Unit

R

th (j-c)

Junction to case TO-220AB / DPAK Per diode 4.0 °C/W

TO-220FPAB 6.5 TO-220AB / DPAK Total 2.5 TO-220FPAB 5

R

th (j-c)

Coupling TO-220AB / DPAK 1 °C/W

TO-220FPAB 3.5

When the diodes 1 and 2 are used simultaneously: ∆ Tj (diode1) = P(diode1) x R

(per diode) + P(diode2) x R

th(j-c)

th(c)

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests conditions Min. Typ. Max. Unit

I

* Reverse leakage

R

current

V

** Forward voltage drop Tj = 25°C I

F

Tj = 25°C V

R=VRRM

4 µA

Tj = 125°C 2 40

= 4 A 1.1 V

F

Tj = 125°C I Tj = 25°C I

= 4 A 0.81 0.95

F

= 8 A 1.25

F

Tj = 125°C I

Pulse test: * tp = 5ms, δ <2%

** tp = 380µs, δ <2%

= 8 A 0.95 1.1

F

To evaluate the maximumconduction losses use the following equation : P=0.80xI

F(AV)

+ 0.037 I

F2(RMS)

DYNAMIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests conditions Min. Typ. Max. Unit

trr Reverse recovery

time

tfr Forward recovery

time

V

FP

Forward recovery

Tj = 25°C I

= 0.5 A Irr = 0.25 A

F

IR=1A

=4A dIF/dt = 100 A/µs

F

VFR=1.1xVFmax

=4A dIF/dt = 100 A/µs 2.4 V

F

13 20 ns

50 ns

voltage

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STTH802/CT/CB/CFP

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

P (W)F(av)

5

4

3

2

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

δ = 0.05

δ = 0.1

I (A)F(av)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Fig. 3: Forward voltage drop versus forward current (per diode).

I (A)FM

100.0

Tj=125°C

Typical values

Tj=125°C

10.0

1.0

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

Tj=125°C

Maximum values

Tj=25°C

Maximum values

V (V)FM

Fig.2:Peak current versusformfactor (per diode).

I (A)M

60

50

P= 5W

40

30

20

10

P= 2W

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

δ

P = 10W

=tp/T

T

tp

Fig. 4-1: Relative variation of thermal impedance junctiontocaseversuspulseduration(TO-220AB, DPAK).

Zth(j-c) / Rth(j-c)

1.0

δ = 0.5

δ = 0.2

δ = 0.1

δ

=tp/T

T

tp

Single pulse

tp(s)

0.1

1.E-03 1.E-02 1.E-01 1.E+00

Fig. 4-2:Relativevariation of thermal impedance

junctiontocase versus duration(TO-220FPAB).

Zth(j-c) / Rth(j-c)

1.0

δ = 0.5

δ = 0.2

δ = 0.1

0.1

Single pulse

T

tp(s)

=tp/T

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

δ

tp

Fig. 5-1: Non repetitive surge peak forward current versus overload duration per diode (TO-220AB, DPAK).

I (A)M

70

60

50

40

30

20

IM

10

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

Tc=25°C

Tc=75°C

Tc=125°C

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