SGS Thomson Microelectronics STTH8003CY Datasheet
HIGH FREQUENCYSECONDA RY RECTIFIERS
MAJORPRODUCTSCHARACTERISTICS
STTH8003CY
PRELIMINARY DATASHEET
I
F(AV)
V
RRM
(max) 1 V
V
F
2x40 A
300 V
trr(max) 60 ns
FEATURESAND BENEFITS
COMBINES HIGHEST RECOVERY AND
VOLTAGEPERFORMANCE.
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY.
A2
K
A1
HIGH OPERATING TEMPERATURE THANKS
TO LOWLEAKAGECURRENT.
DESCRIPTION
Dual rectifiers suited for Switch Mode Power
Max247
Supplyand highfrequencyDC to DCconverters.
Packaged in Max247, this device is intended for
use in low voltage, high frequency inverters, free
wheeling operation, welding equipment and
telecompower supplies.
ABSOLUTE RATINGS(limitingvalues)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitivepeak reversevoltage 300 V
RMSforward current 50 A
Averageforward
current
Surgenon repetitive forwardcurrent tp = 10ms
Tc = 105°C
δ =0.5
Per diode
Per device
40
80
400 A
sinusoidal
I
RSM
Non repetitiveavalanche current tp = 100µs
4A
square
T
stg
Storagetemperaturerange -55+150 °C
Tj Maximumoperating junctiontemperature + 150 °C
October 1999 - Ed: 1A
A
1/3
STTH8003CY
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junctionto case thermalresistance Perdiode
Total
Coupling 0.2 °C/W
0.8
0.5
°C/W
STATICELECTRICALCHARACTERISTICS
Symbol Parameter TestsConditions Min. Typ. Max. Unit
I
* Reverseleakage current VR=300 V Tj=25°C80µA
R
Tj = 125°C 80 800
V
F
Forwardvoltagedrop I
**
= 40A Tj = 25°C
F
Tj = 125°C
1.25 V
0.85 1
Pulsetest : * tp= 5ms, δ <2%
** tp = 380 µs, δ <2%
Toevaluate the maximum conductionlossesuse the followingequation:
P= 0.75x I
F(AV)
+ 0.0062I
F(RMS)
2
DYNAMICELECTRICALCHARACTERISTICS
Symbol TestsConditions Min. Typ. Max. Unit
=0.5A Irr= 0.25A IR=1A Tj=25°C
trr
I
RM
S
factor
tfr I
V
FP
I
F
I
=1A dIF/dt = - 50 A/µsVR=30V 60
F
Vcc= 200V IF=40A dIF/dt = -200 A/µs Tj = 125°C13A
=40A dIF/dt= 200 A/µs,
F
V
= 1.1x VFmax
FR
0.3 -
Tj=25°C 450 ns
50 ns
5V
2/3
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