SGS Thomson Microelectronics STTH6003TV, STTH6003CW Datasheet
HIGH FREQUENCYSECONDARY RECTIFIER
MAJORPRODUCT CHARACTERISTICS
STTH6003TV/CW
I
F(AV)
V
RRM
(max) 1 V
V
F
2 x 30 A
300 V
trr(max) 55 ns
FEATURESAND BENEFITS
COMBINES HIGHEST RECOVERY AND
VOLTAGEPERFORMANCE
ULTRA-FAST,SOFT AND NOISE-FREE
RECOVERY
INSULATEDPACKAGE: ISOTOP
Insulationvoltage:2500 V
RMS
Capacitance:< 45 pF
LOW INDUCTANCE AND LOW CAPACI-
TANCE ALLOW SIMPLIFIED LAYOUT
DESCRIPTION
Dual rectifiers suited for Switch Mode Power
SupplyandhighfrequencyDC to DCconverters.
Packaged either in ISOTOP or in TO-247, this
device is intended for use in low voltage, high
ABSOLUTERATINGS
(limitingvalues, per diode)
A1
A2
K2
A2
ISOTOP
STTH6003TV
K1
K2
K1
A1
A1
A2
TO-247
STTH6003CW
K
A2
K
A1
frequency inverters, free wheeling operation,
weldingequipmentsand telecompowersupplies.
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(RMS)
I
F(AV)
I
FSM
Repetitivepeak reversevoltage
RMSforward current ISOTOP
RMSforward current TO-247
Averageforwardcurrent ISOTOP Tc = 95°C
Surgenon repetitiveforward
current.
I
RSM
T
Tj
ISOTOPis a registered trademark of STMicroelectronics
October 1999 - Ed: 5C
Non repetitivepeakreverse current tp =100 µs square
stg
Storagetemperaturerange ISOTOP
Maximumoperatingjunctiontemperature ISOTOP
Perdiode
δ = 0.5
TO-247 Tc =135°C
δ = 0.5
Perdevice
Perdiode
Perdevice
ISOTOP tp = 10ms sinusoidal
TO-247 tp = 10ms sinusoidal
TO-247
TO-247
300 V
100 A
60 A
30
60
30
60
400 A
300 A
4A
- 55 to+ 150 °C
- 65 to+ 175 °C
150 °C
175 °C
A
A
1/6
STTH6003TV/CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junctionto case ISOTOP Per diode
Total
TO-247 Per diode
Total
Coupling
1.4
0.75
1
0.55
0.1
Whenthe diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P(diode1) x R
(perdiode) + P(diode2) x R
th(j-c)
th(C)
STATICELECTRICAL CHARACTERISTICS(per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
°C/W
*
I
R
V
F
Reverseleakage
current
**
Forwardvoltage drop I
V
=300V Tj=25°C
R
Tj = 125°C
= 30A Tj=25°C
F
Tj = 125°C
60 600
0.85 1
60 µA
1.25 V
Pulsetest : * tp = 5 ms, δ <2%
**tp = 380µs, δ <2%
To evaluatethe maximumconductionlosses use thefollowingequation:
P = 0.75 x I
F(AV)
+0.008 x I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
trr
tfr
V
FP
S
factor
I
RM
= 0.5 A Irr= 0.25A IR=1A Tj=25°C
I
F
I
=1A dIF/dt= - 50 A/µsVR=30V
F
I
=30A dIF/dt = 200A/µsTj=25°C
F
VFR=1.1 xVFmax.
Vcc =200 V IF= 30 A Tj =125°C
dIF/dt = 200 A/µs
0.3 -
40 ns
55
350 ns
5V
11 A
2/6
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