SGS Thomson Microelectronics STTH5R06G-TR, STTH5R06G, STTH5R06D, STTH5R06FP, STTH5R06B-TR Datasheet
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STTH5R06D/FP/B/G
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
(typ.) 5 A
I
RM
5A
600 V
Tj (max) 175 °C
(max) 1.8 V
V
F
trr (max) 40 ns
FEATURES AND BENEFITS
Ultrafast switching
■
■ Low reverse recovery current
■ Reduces switching losses
Low thermal resistance
■
DESCRIPTION
The STTH5R06D/FP/B/G, which is using ST
Turbo 2 600V technology, is specially suited as
boost diode in continuous mode power factor
corrections and hard switching conditions.
The device (available in TO-220AC,
TO-220FPAC, D
2
PAK and DPAK) is also intended
for use as a free wheeling diode in power supplies
and other power switching applications.
TO-220FPAC
STTH5R06FP
K
A
NC
DPAK
STTH5R06B
K
A
K
A
K
TO-220AC
STTH5R06D
K
A
NC
D2PAK
STTH5R06G
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
Repetitive peak reverse voltage 600 V
RMS forward current TO-220AC / TO-220FPAC / D2PAK 20 A
DPAK 10 A
I
F(AV)
Average forward current TO-220AC
Tc = 105°C δ = 0.5
5A
TO-220FPAC
DPAK / D2PAK
I
FSM
T
stg
Surge non repetitive forward current tp = 10 ms Sinusoidal 50 A
Storage temperature range - 65 + 175 °C
Tj Maximum operating junction temperature 175 °C
October 2002 - Ed: 3B
1/8
STTH5R06D/FP/B/G
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case TO-220AC / DPAK / D2PAK 3.0 °C/W
TO-220FPAC 5.5
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
Reverse leakage
current
Forward voltage drop IF= 5 A Tj= 25°C 2.9 V
F
VR= 600V Tj = 25°C 20 µA
Tj = 125°C 25 250
Tj = 125°C 1.4 1.8
To evaluate the maximum conduction losses use the following equation :
P=1.16xI
F(AV)
+ 0.128 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
trr I
= 0.5 A Irr = 0.25 A IR= 1A Tj = 25°C 25 ns
F
I
=1A dIF/dt=-50A/µs
F
40
VR= 30V
I
RM
S factor 0.35
VR= 400 V IF=5A
dIF/dt = - 200A/µs
Tj = 125°C 5.0 6.0 A
Qrr 110 nC
tfr I
V
FP
Fig.1: Conduction losses versusaveragecurrent.
=5A dIF/dt=40A/µs
F
VFR=1.1xVFmax
Tj = 25°C 150 ns
4.5 V
Fig. 2: Forward voltage drop versus forward
current.
P(W)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
01234567
δ = 0.05
δ = 0.1
δ = 0.2
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
IFM(A)
50
45
40
35
30
25
20
15
10
5
0
0123456
(Maximum values)
(Maximum values)
Tj=125°C
Tj=125°C
(Typical values)
(Typical values)
Tj=125°C
Tj=125°C
(Maximum values)
VFM(V)
Tj=25°C
2/8
STTH5R06D/FP/B/G
Fig. 3-1: Relative variation of thermal impedance
junctiontocase versus pulse duration (TO-220AC,
DPAK, D
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
2
PAK).
Zth(j-c)/Rth(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
tp(s)
δ
=tp/T
T
tp
Fig. 4: Peak reverse recovery current versus
/dt (90% confidence).
dI
F
IRM(A)
22
VR=400V
20
Tj=125°C
18
16
14
12
10
8
6
4
2
0
0 200 400 600 800 1000
IF=0.5 x IF(av)
IF=0.25 x IF(av)
IF=IF(av)
dIF/dt(A/µs)
IF=2 x IF(av)
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAC).
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.2
0.1
Single pulse
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
tp(s)
δ
=tp/T
T
tp
Fig. 5: Reverse recovery time versus dIF/dt
(90% confidence).
trr(ns)
80
70
60
50
40
30
20
10
0
0 200 400 600 800 1000
IF=2 x IF(av)
IF=IF(av)
dIF/dt(A/µs)
IF=0.5 x IF(av)
VR=400V
Tj=125°C
Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence).
Qrr(nC)
350
VR=400V
Tj=125°C
300
250
200
150
100
50
0
0 200 400 600 800 1000
dIF/dt(A/µs)
IF=2 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)
Fig. 7: Softness factor versus dIF/dt (typical
values).
S factor
0.70
IF=IF(av)
0.65
VR=400V
Tj=125°C
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0 200 400 600 800 1000
dIF/dt(A/µs)
3/8
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