SGS Thomson Microelectronics STTH5L06 Datasheet
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STTH5L06
I
F(AV)
V
RRM
(max) 150 µA
I
R
5A
600 V
Tj (max) 175 °C
(max) 1.05 V
V
F
trr (max) 95 ns
FEATURES AND BENEFITS
Ultrafast switching
■
■ Low reverse recovery current
■ Reduces switching & conduction losses
Low thermal resistance
■
DESCRIPTION
The STTH5L06, which is using ST Turbo 2 600V
technology, is specially suited as boost diode in
discontinuous or critical mode power factor
corrections.
The device is also intended for use as a free
wheeling diode in powersupplies and other power
switching applications.
DO-201AD
STTH5L06
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage 600 V
RMS forward current 20 A
Average forward current Tl = 50°C δ =0.5 5 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 110 A
Storage temperature range - 65 + 175 °C
Tj Maximum operating junction temperature + 175 °C
November 2001 - Ed: 1A
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STTH5L06
THERMAL PARAMETERS
Symbol Parameter Maximum Unit
R
th (j-l)
R
th (j-a)
Note 1: withrecommended pad layout (see Fig. 12)
Junction to lead L = 10mm 20 °C/W
Junction to ambient (note 1) L = 10mm 75
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
Reverse leakage
current
Forward voltage drop IF= 5 A Tj = 25°C 1.3 V
F
VR= 600V Tj = 25°C 5 µA
Tj = 150°C 25 150
Tj = 150°C 0.85 1.05
To evaluate the maximum conduction losses use the following equation :
P=0.89xI
F(AV)
+ 0.033 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
trr Reverse recovery
time
tfr Forward recovery
time
V
FP
Forward recovery
time
=1A dIF/dt=-50A/µs
I
F
Tj = 25°C 65 95 ns
VR= 30V
I
=5A dIF/dt = 100 A/µs
F
Tj = 25°C 150 ns
VFR=1.1xVFmax
IF=5A dIF/dt = 100 A/µs Tj = 25°C 7 V
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