SGS Thomson Microelectronics STTH3L06 Datasheet
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STTH3L06
I
F(AV)
V
RRM
(max) 100 µA
I
R
3A
600 V
Tj (max) 175 °C
(max) 1.05 V
V
F
trr (max) 85 ns
FEATURES AND BENEFITS
Ultrafast switching
■
■ Low reverse recovery current
■ Reduces switching & conduction losses
Low thermal resistance
■
DESCRIPTION
The STTH3L06, which is using ST Turbo 2 600V
technology, is specially suited as boost diode in
discontinuous or critical mode power factor
corrections.
The device is also intended for use as a free
wheeling diode in powersupplies and other power
switching applications.
DO-201AD
STTH3L06
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage 600 V
RMS forward current 20 A
Average forward current Tl = 100°C δ =0.5 3 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 80 A
Storage temperature range - 65 + 175 °C
Tj Maximum operating junction temperature + 175 °C
October 2001 - Ed: 1A
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STTH3L06
THERMAL PARAMETERS
Symbol Parameter Maximum Unit
R
th (j-l)
R
th (j-a)
Note 1:Withrecommended pad layout (see Fig 12)
Junction to lead L = 10 mm 20 °C/W
Junction to ambient (note 1) L = 10 mm 75
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
Reverse leakage
current
Forward voltage drop IF= 3 A Tj = 25°C 1.3 V
F
VR= 600V Tj = 25°C 3 µA
Tj = 150°C 15 100
Tj = 150°C 0.85 1.05
To evaluate the maximum conduction losses use the following equation :
P=0.89xI
F(AV)
+ 0.055 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
trr Reverse recovery
time
tfr Forward recovery
time
V
FP
Forward recovery
time
=1A dIF/dt=-50A/µs
I
F
Tj = 25°C 60 85 ns
VR= 30V
I
=3A dIF/dt = 100 A/µs
F
Tj = 25°C 100 ns
VFR=1.1xVFmax
IF=3A dIF/dt = 100 A/µs Tj = 25°C 7.5 V
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