SGS Thomson Microelectronics STTH30R06CW Datasheet
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STTH30R06CW
I
F(AV)
V
RRM
(typ.) 8 A
I
RM
2x15A
600 V
Tj (max) 175 °C
(max) 1.8 V
V
F
trr (max) 50 ns
FEATURES AND BENEFITS
Ultrafast switching
■
■ Low reverse recovery current
■ Reduces switching losses
Low thermal resistance
■
DESCRIPTION
The STTH30R06CW, which is using ST Turbo 2
600V technology, is specially suited as boost
diodeincontinuousmodepowerfactorcorrections
and hard switching conditions.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
A1
TO-247
STTH30R06CW
A2
K
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage 600 V
RMS forward current 30 A
Average forward current Per diode
Per device
15
30
Surge non repetitive forward current tp = 10 ms Sinusoidal 120 A
Storage temperature range - 65 + 175 °C
Tj Maximum operating junction temperature 175 °C
July 2001 - Ed: 1A
A
1/5
STTH30R06CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case Per diode 1.5 °C/W
Total 1.0
R
th (c)
Coupling 0.5
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
Reverse leakage
current
Forward voltage drop IF= 15 A Tj = 25°C 2.9 V
F
VR= 600V Tj = 25°C 60 µA
Tj = 125°C 70 800
Tj = 125°C 1.4 1.8
To evaluate the maximum conduction losses use the following equation :
P=1.16xI
F(AV)
+ 0.043 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
trr I
= 0.5 A Irr = 0.25 A IR= 1A Tj = 25°C 30 ns
F
I
=1A dIF/dt=-50A/µs
F
50
VR= 30V
I
RM
S factor 0.15
VR= 400 V IF= 15A
dIF/dt = - 200A/µs
Tj = 125°C 7.5 9.0 A
Qrr 220 nC
tfr I
V
FP
=15A dIF/dt = 120 A/µs
F
VFR=1.1xVFmax
Tj = 25°C 200 ns
6V
2/5
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