SGS Thomson Microelectronics STTH30R03CG, STTH30R03CW Datasheet
®
HIGH FREQUENCY SECONDARY RECTIFIER
MAJOR PRODUCT CHARACTERISTICS
STTH30R03CW/CG
I
F(AV)
V
RRM
(typ.) 4.5A
I
RM
2x15A
300 V
Tj (max) 175 °C
(max) 1.4 V
V
F
trr (max) 35 ns
FEATURES AND BENEFITS
Designed for high frequency applications.
■
■ Hyperfast recovery competes with GaAs devices.
■ Allowssizedecreaseofsnubbers and heatsinks.
DESCRIPTION
The TURBOSWITCH "R" is an ultra high
performance diode.
This TURBOSWITCH family, which drastically
cuts losses in associated MOSFET when run at
high dI
/dt, is suited for HF OFF-Line SMPS and
F
DC/DC converters.
ABSOLUTE RATINGS (limiting values, per diode)
A2
K
A1
TO-247
STTH30R03CW
K
A2
A1
D2PAK
STTH30R03CG
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
July 2002 - Ed: 1C
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 120°C
Surge non repetitive forward current tp = 10 ms sinusoidal
Storage temperature range
Maximum operating junction temperature
δ = 0.5
Per diode
Per device
300 V
30 A
15
30
120 A
- 65 + 175 °C
+ 175 °C
A
1/6
STTH30R03CW/CG
THERMAL AND POWER DATA
Symbol Parameter Value Unit
R
th (j-c)
Junction to case Per diode
Total
R
th (c)
Coupling
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
2.0 °C/W
1.2
0.4
*
I
R
Reverse leakage
V
R=VRRM
current
V
**
F
Forward voltage drop I
= 15 A Tj = 25°C
F
Tj = 25°C
Tj = 125°C
Tj = 125°C
30 200
1.1 1.4
20 µA
1.9 V
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ<2%
To evaluate the maximum conduction lossesuse thefollowing equation:
P=1xI
F(AV)
+ 0.026 I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
20 ns
35
4.5 6 A
I
trr
RM
= 0.5 A Irr =0.25 A IR= 1A Tj =25°C
I
F
I
=1A dIF/dt=-50A/µsVR= 30V
F
VR= 200 V IF= 15A dIF/dt = - 200A/µs Tj = 125°C
S factor 0.4
TURN-ON SWITCHING CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
t
fr
Tj = 25°C IF= 15A dIF/dt = 100A/µs
300 ns
measured at 1.1xVFmax
2/5
V
FP
Tj = 25°C IF= 15A dIF/dt = 100A/µs
3.5 V
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