SGS Thomson Microelectronics STTH302 Datasheet
®
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
STTH302
I
F(AV)
V
RRM
3A
200 V
Tj (max) 175 °C
(max) 0.75 V
V
F
trr (max) 35 ns
FEATURES AND BENEFITS
Very low conduction losses
■
Negligible switching losses
■
Low forward and reverse recovery times
■
High junction temperature
■
DESCRIPTION
The STTH302 which is using ST's new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
ABSOLUTE RATINGS (limiting values)
DO-201AD
STTH302
Symbol Parameter Value Unit
V
RRM
I
F (AV)
I
FSM
T
stg
Tj
Repetitive peak reverse voltage
Average forward current TI = 107°C δ = 0.5
Surge non repetitive forward current tp= 10ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
200 V
3A
130 A
-65to+175 °C
175 °C
THERMAL PARAMETERS
Symbol Parameter Value Unit
Rth (j-a)
* Oninfiniteheatsink with 10mm lead length.
November 2001 - Ed: 1A
Junction-ambient*
25 °C/W
1/5
STTH302
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
*
I
R
V
F
Pulse test:*tp=5ms,δ<2%
Reverse leakage current T
**
Forward voltage drop T
** tp = 380 µs, δ <2%
= 25°C VR=V
j
= 125°C
T
j
= 25°C IF=3A
j
T
= 125°C
j
RRM
475
0.66 0.75
3 µA
0.95 V
To evaluate the maximum conduction losses use the following equations:
P=0.60xI
F(AV)
+ 0.05 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery
time
tfr Forward recovery
time
V
FP
Forward recovery
voltage
=1A dIF/dt = - 50A/µs
I
F
VR= 30V
I
=3A dIF/dt = 50A/µs
F
VFR=1.1xVFmax
Tj= 25°C
Tj= 25°C
= 25°C
T
j
70 ns
1.6 V
35 ns
2/5
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